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LM810M3-4.00

Texas Instruments

LM810M3-4.00 by Texas Instruments

LM810M3-4.00 by Texas Instruments is a Power Management IC with a supply voltage range of 1.2V to 5.5V, operating temperature from -40°C to 105°C, and a small outline package style. It is ideal for industrial applications requiring power supply support circuits in compact spaces due to its thin profile and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 2,545 parts In-Stock

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Anansix

USA . 2,476 parts In-Stock

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Digiode

USA . 1,055 parts In-Stock

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ComSIT Distribution GmbH

Germany . 290 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 267 parts In-Stock

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Semi Source

USA . 162 parts In-Stock

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Executive Electronics, Inc.

USA . 150 parts In-Stock

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One Stop Electronics

USA . 953 parts In-Stock

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$5.500

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Parana Technologies

USA . 209 parts In-Stock

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$17.146

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$17.358

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AZTECH Wire

Italy . 795 parts In-Stock

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$17.457

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DigiPath Technology Company

USA . 167 parts In-Stock

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$18.880

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$17.369

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ChromeModa Solutions

Germany . 3,025 parts In-Stock

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$19.265

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$15.797

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IDEA Electronic Components Group

UK . 2,272 parts In-Stock

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$18.302

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Kepictronics

USA . 17,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,867 parts In-Stock

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Corphita

USA . 3,336 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 267 parts In-Stock

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Overview

Experience the reliability and superior performance of the Texas Instruments LM810M3-4.00 Power Management IC. Crafted with precision and expertise, this innovative product is perfect for a wide range of applications in various industries. From industrial settings to consumer electronics, the LM810M3-4.00 offers unmatched value, efficiency, and convenience. Trust in Texas Instruments for cutting-edge technology that delivers exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort in assembly.

Nominal Supply Voltage (Vsup): 5 V

Provides a stable and reliable power source for the connected devices.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact design saves space on the circuit board and allows for efficient use of available area.

Maximum Operating Temperature: 105 °C

Ensures reliable performance even under high temperature conditions, ideal for industrial applications.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, making it suitable for use in various environments.

Width (mm): 1.2955 mm

Narrow width allows for the product to be used in tight spaces where larger components may not fit.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Specifically designed to support power supply functions, ensuring efficient power management.

Temperature Grade: INDUSTRIAL

Designed to meet the rigorous demands of industrial applications, providing reliability and durability.

Technical Specifications

Power Management ICs LM810M3-4.00 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 4 V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

Length:

2.921 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1.041 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width (mm):

1.2955 mm

Trade Compliance

LM810M3-4.00 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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