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LM5114AMFX/S7003103

Texas Instruments

LM5114AMFX/S7003103 by Texas Instruments

LM5114AMFX/S7003103 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 12.6V and max output current of 7.6A, suitable for automotive applications. It operates in temperatures ranging from -40°C to 125°C, features a small outline package style, and has dual terminals with matte tin finish.

Median Price

$1.098

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 37,269 parts In-Stock

1+ parts

$1.098

100+ parts

$0.907

1k+ parts

$0.490

10k+ parts

-

37,269

$1.098

$0.907

$0.490

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,655 parts In-Stock

1+ parts

$1.043

100+ parts

-

1k+ parts

-

10k+ parts

-

1,655

$1.043

-

-

-

Vyrian

USA . 5,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,451

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,829 parts In-Stock

1+ parts

$0.988

100+ parts

-

1k+ parts

-

10k+ parts

-

4,829

$0.988

-

-

-

Parana Technologies

USA . 102 parts In-Stock

1+ parts

$7.841

100+ parts

-

1k+ parts

$8.396

10k+ parts

-

102

$7.841

-

$8.396

-

DigiPath Technology Company

USA . 588 parts In-Stock

1+ parts

$8.634

100+ parts

$7.943

1k+ parts

-

10k+ parts

-

588

$8.634

$7.943

-

-

ChromeModa Solutions

Germany . 2,360 parts In-Stock

1+ parts

$8.810

100+ parts

$7.224

1k+ parts

-

10k+ parts

-

2,360

$8.810

$7.224

-

-

IDEA Electronic Components Group

UK . 353 parts In-Stock

1+ parts

$8.810

100+ parts

$8.370

1k+ parts

$7.929

10k+ parts

-

353

$8.810

$8.370

$7.929

-

AZTECH Wire

Italy . 918 parts In-Stock

1+ parts

$15.760

100+ parts

-

1k+ parts

-

10k+ parts

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918

$15.760

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 27,268 parts In-Stock

1+ parts

-

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27,268

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Overview

Elevate your electronics projects with the LM5114AMFX/S7003103 by Texas Instruments, a top-tier manufacturer known for its cutting-edge technology and superior quality. This MOSFET Gate Driver offers unparalleled performance and reliability, making it ideal for a wide range of applications. With a compact design and advanced features, this product delivers exceptional value and benefits to customers seeking high-quality components for their projects. Upgrade your designs with the LM5114AMFX/S7003103 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and resistance to external elements, making the product suitable for various applications.

Maximum Supply Voltage: 12.6 V

Allows for a wide range of input voltages, making the product versatile and compatible with different systems.

Minimum Operating Temperature: -40 °C

Can operate in very low temperature environments, ensuring reliability in extreme conditions.

Maximum Output Current: 7.6 A

Capable of delivering high output current, suitable for driving power-hungry MOSFETs.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Utilizes advanced IC technology for efficient and reliable driving of MOSFETs, enhancing overall system performance.

Technical Specifications

MOSFET Gate Drivers LM5114AMFX/S7003103 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

7.6 A

Nominal Output Peak Current Limit:

7.6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

1.9 mA

Maximum Supply Voltage:

12.6 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

4.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

LM5114AMFX/S7003103 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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