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EP1830-30IFN

Texas Instruments

EP1830-30IFN by Texas Instruments

EP1830-30IFN by Texas Instruments is a CMOS PLD with 48 macro cells, 34 ns propagation delay, and 5.5 V max supply voltage. Ideal for industrial applications requiring programmable logic devices in a square chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,527 parts In-Stock

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Digiode

USA . 2,310 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 626 parts In-Stock

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$0.981

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626

$0.981

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Northwest PG Solutions

USA . 1,368 parts In-Stock

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$1.079

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AZTECH Wire

Italy . 767 parts In-Stock

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$7.643

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One Stop Electronics

USA . 1,290 parts In-Stock

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$32.000

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Parana Technologies

USA . 151 parts In-Stock

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$91.789

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DigiPath Technology Company

USA . 1,867 parts In-Stock

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$101.071

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$92.986

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ChromeModa Solutions

Germany . 3,952 parts In-Stock

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$103.134

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$84.570

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IDEA Electronic Components Group

UK . 322 parts In-Stock

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$103.134

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$97.977

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$92.821

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322

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Corphita

USA . 1,062 parts In-Stock

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Overview

Experience the power of cutting-edge technology with the EP1830-30IFN by Texas Instruments. As a leader in Programmable Logic Devices (PLD), Texas Instruments delivers unmatched quality and reliability in each product. With 48 macro cells and a fast propagation delay of 34 ns, this PLD is perfect for a wide range of applications. From industrial automation to consumer electronics, the EP1830-30IFN offers exceptional value and performance, making it the ideal choice for your next project. Upgrade your designs with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the device, making it reliable for long-term use.

Propagation Delay: 34 ns

Low propagation delay allows for fast signal processing and efficient operation of the device.

Surface Mount: YES

Surface mount capability enables easy integration of the device onto circuit boards, saving space and enhancing ease of assembly.

Maximum Supply Voltage: 5.5 V

A high maximum supply voltage tolerance provides flexibility in power source options and helps prevent damage from voltage fluctuations.

No. of Macro Cells: 48

Having a high number of macro cells allows for complex programmable logic configurations, making the device versatile for various applications.

Technology Used: CMOS

CMOS technology ensures low power consumption and high noise immunity, improving the overall efficiency and reliability of the device.

Nominal Supply Voltage (V): 5

A nominal supply voltage of 5V ensures compatibility with standard power sources and simplifies integration into existing systems.

No. of Terminals: 68

Having a high number of terminals allows for increased connectivity options and versatility in circuit design.

Output Function: MACROCELL

The use of macrocells for output functions provides flexibility in logic operations and enhances the programmability of the device.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliable performance in a variety of environmental conditions, making the device suitable for industrial applications.

Technical Specifications

Programmable Logic Devices (PLD) EP1830-30IFN attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

In-System Programmable:

No

Organization:

12 Dedicated Inputs, 48 I/O

Output Function:

Macrocell

No. of Macro Cells:

48

No. of Dedicated Inputs:

12

No. of I/O Lines:

48

Propagation Delay:

34 ns

Technology:

CMOS

Sub-Category:

Programmable Logic Devices

Additional Features:

F_Max for 12-bit counter applicationsIS 33.3 MHz; Labs interconnected by PIA; 4 Labs; 48 Macrocells

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage:

5.5 V

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

85 °C (185 °F)

Minimum Operating Temperature:

-40 °C (-40 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Plastic/Epoxy

Package Style (Meter):

Chip Carrier

Package Code:

Package Shape:

Package Equivalence Code:

LDCC68,1.0SQ

Width:

24.2316 mm

Length:

24.2316 mm

Maximum Seated Height:

4.57 mm

Terminal Characteristcs

Terminal Position:

Quad

Terminal Form:

No. of Terminals:

68

Terminal Pitch:

1.27 mm

Standards

JESD-30 Code:

S-PQCC-J68

JTAG Boundary Scan Test:

No

Qualified:

No

Trade Compliance

EP1830-30IFN Programmable ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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