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DS15BA101TSDX

Texas Instruments

DS15BA101TSDX by Texas Instruments

DS15BA101TSDX by Texas Instruments is an 8-terminal buffer amplifier with a supply voltage of 3.3V, suitable for industrial applications. With a small outline and very thin profile package style, it operates b/w -40 to 85°C temperature range. Ideal for surface mount designs due to its square shape and plastic/epoxy body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,309 parts In-Stock

1+ parts

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5,309

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Digiode

USA . 1,759 parts In-Stock

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1,759

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Anansix

USA . 957 parts In-Stock

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957

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Distributors (Availability)

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One Stop Electronics

USA . 848 parts In-Stock

1+ parts

$1.410

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848

$1.410

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Parana Technologies

USA . 2,326 parts In-Stock

1+ parts

$3.473

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$3.999

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2,326

$3.473

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$3.999

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ChromeModa Solutions

Germany . 6,617 parts In-Stock

1+ parts

$3.902

100+ parts

$3.200

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6,617

$3.902

$3.200

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IDEA Electronic Components Group

UK . 178 parts In-Stock

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$3.902

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$3.512

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178

$3.902

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$3.512

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Native Components

USA . 947 parts In-Stock

1+ parts

$12.120

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947

$12.120

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Northwest PG Solutions

USA . 1,988 parts In-Stock

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$13.332

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$11.999

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1,988

$13.332

$11.999

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AZTECH Wire

Italy . 613 parts In-Stock

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$16.162

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613

$16.162

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Corphita

USA . 1,690 parts In-Stock

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1,690

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DigiPath Technology Company

USA . 498 parts In-Stock

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$3.518

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498

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$3.518

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Overview

Elevate your electronic designs with the DS15BA101TSDX by Texas Instruments, a premier manufacturer known for superior quality and reliability. As a Buffer Amplifier, this versatile component is designed to enhance signal integrity and drive performance in a wide range of applications. With a compact package body material of PLASTIC/EPOXY and surface mount capability, this amplifier offers convenience and flexibility for seamless integration. Experience the value and benefits of this top-tier product, providing customers with exceptional results and unmatched advantages in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the buffer amplifier easy to handle and resistant to damage.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures stable and reliable performance in various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this buffer amplifier can withstand high temperatures without any issues.

Minimum Operating Temperature: -40 °C

The buffer amplifier can also operate in very low temperature conditions, down to -40°C, making it versatile in different environments.

Amplifier Type: BUFFER

Being a buffer amplifier, it provides impedance matching and isolation between different circuits, ensuring signal integrity and stability.

Technical Specifications

Buffer Amplifiers DS15BA101TSDX attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Very Thin Profile

Trade Compliance

DS15BA101TSDX Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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