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BUF11704AIPWPRG4

Texas Instruments

BUF11704AIPWPRG4 by Texas Instruments

BUF11704AIPWPRG4 by Texas Instruments is a 10-function buffer amplifier with a bandwidth of 1 MHz. It operates b/w -25 to 85 °C and has a supply voltage of 18 V. This small-outline package with gull-wing terminals is ideal for applications requiring low bias current and high input offset voltage precision.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,061 parts In-Stock

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8,061

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Digiode

USA . 695 parts In-Stock

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695

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Distributors (Availability)

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Parana Technologies

USA . 763 parts In-Stock

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$1.397

100+ parts

-

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$2.105

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763

$1.397

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$2.105

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ChromeModa Solutions

Germany . 5,373 parts In-Stock

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$1.570

100+ parts

$1.287

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$1.570

$1.287

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IDEA Electronic Components Group

UK . 1,165 parts In-Stock

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$1.570

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$1.413

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$1.570

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$1.413

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One Stop Electronics

USA . 1,168 parts In-Stock

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$6.410

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1,168

$6.410

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AZTECH Wire

Italy . 668 parts In-Stock

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$6.540

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668

$6.540

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Corphita

USA . 4,447 parts In-Stock

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Kepictronics

USA . 3,240 parts In-Stock

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DigiPath Technology Company

USA . 2,107 parts In-Stock

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$1.416

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2,107

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$1.416

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Northwest PG Solutions

USA . 1,287 parts In-Stock

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1,287

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Native Components

USA . 131 parts In-Stock

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Overview

Enhance your electronic designs with the BUF11704AIPWPRG4 by Texas Instruments, a leading manufacturer known for quality and reliability. As part of the Buffer Amplifiers category, this product offers superior performance and precision in signal buffering applications. With a wide range of functions and a nominal supply voltage of 18V, this amplifier is perfect for various electronic projects. Experience the benefits of high-quality construction and innovative technology with the BUF11704AIPWPRG4, providing value and efficiency to customers seeking top-notch electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 20000 uV

Low input offset voltage ensures accurate signal processing and minimal distortion.

Maximum Average Bias Current (IIB): 0.0002 uA

Low bias current helps in achieving high precision and stability in signal amplification.

Surface Mount: YES

Surface mount technology makes installation easier and allows for efficient use of space on PCBs.

Nominal Supply Voltage / Vsup (V): 18

The nominal supply voltage of 18V provides sufficient power for the amplifier to operate effectively.

Maximum Seated Height: 1.2 mm

Low seated height makes the product suitable for compact designs and saves space in the overall system.

Nominal Bandwidth (3dB): 1 MHz

The wide bandwidth of 1MHz allows the amplifier to handle a variety of signal frequencies efficiently.

Technology: BIPOLAR

Bipolar technology offers high performance in terms of accuracy and linearity, making it ideal for precision applications.

Technical Specifications

Buffer Amplifiers BUF11704AIPWPRG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

10

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1 MHz

Nominal Slew Rate:

1.6 V/us

Input Offset Voltage Limit:

20 mV

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

18 V

Maximum Supply Voltage:

19 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.382 in (9.7 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

28

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

BUF11704AIPWPRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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