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DS15BA101TSD

Texas Instruments

DS15BA101TSD by Texas Instruments

DS15BA101TSD by Texas Instruments is an 8-terminal buffer amplifier with a supply voltage of 3.3V and operating temperature range from -40 to 85°C. It is a surface-mount device in a small outline package, suitable for industrial applications requiring low-profile components.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,676 parts In-Stock

1+ parts

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4,676

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Anansix

USA . 2,862 parts In-Stock

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2,862

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Digiode

USA . 2,664 parts In-Stock

1+ parts

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2,664

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 778 parts In-Stock

1+ parts

$0.410

100+ parts

-

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778

$0.410

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Native Components

USA . 248 parts In-Stock

1+ parts

$1.370

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248

$1.370

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Northwest PG Solutions

USA . 623 parts In-Stock

1+ parts

$1.507

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623

$1.507

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Parana Technologies

USA . 1,059 parts In-Stock

1+ parts

$4.414

100+ parts

$409.944

1k+ parts

$3.973

10k+ parts

-

1,059

$4.414

$409.944

$3.973

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DigiPath Technology Company

USA . 392 parts In-Stock

1+ parts

$4.861

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392

$4.861

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ChromeModa Solutions

Germany . 4,340 parts In-Stock

1+ parts

$4.960

100+ parts

$4.067

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4,340

$4.960

$4.067

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IDEA Electronic Components Group

UK . 678 parts In-Stock

1+ parts

$4.960

100+ parts

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$4.464

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678

$4.960

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$4.464

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AZTECH Wire

Italy . 896 parts In-Stock

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$18.626

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896

$18.626

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Corphita

USA . 3,556 parts In-Stock

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3,556

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Overview

Elevate your electronic designs with the DS15BA101TSD by Texas Instruments, a top-tier manufacturer renowned for quality and innovation. As a buffer amplifier, this cutting-edge component offers superior performance and reliability in various applications. With a small outline and very thin profile package style, this product is versatile and compact, making it ideal for space-constrained designs. Trust Texas Instruments to deliver exceptional value and benefits with the DS15BA101TSD, providing customers with a competitive edge in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices or applications where weight is a concern.

Surface Mount: YES

Being surface mountable makes the installation of this buffer amplifier easier and more convenient, especially in compact electronic circuits.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic systems and devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this buffer amplifier can function reliably in various environmental conditions without overheating.

Amplifier Type: BUFFER

Being a buffer amplifier, this product provides signal buffering and impedance matching capabilities, allowing for signal integrity maintenance and improved overall system performance.

Technical Specifications

Buffer Amplifiers DS15BA101TSD attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Very Thin Profile

Trade Compliance

DS15BA101TSD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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