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CSD87503Q3ET

Texas Instruments

CSD87503Q3ET by Texas Instruments

CSD87503Q3ET by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 89A IDM, and 194pF Crss. Operating in a temperature range of -55 to 150°C, it has a DUAL terminal position and NO LEAD form factor for surface mount assembly.

Median Price

$1.216

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 780 parts In-Stock

1+ parts

$0.750

100+ parts

$0.492

1k+ parts

$0.400

10k+ parts

-

780

$0.750

$0.492

$0.400

-

Texas Instruments

USA . 31,747 parts In-Stock

1+ parts

$1.423

100+ parts

$1.094

1k+ parts

$0.576

10k+ parts

-

31,747

$1.423

$1.094

$0.576

-

DigiKey

USA . 3,554 parts In-Stock

1+ parts

$1.640

100+ parts

$0.970

1k+ parts

$0.860

10k+ parts

$0.819

3,554

$1.640

$0.970

$0.860

$0.819

Mouser Electronics

USA . 1,011 parts In-Stock

1+ parts

$1.640

100+ parts

$0.912

1k+ parts

$0.839

10k+ parts

-

1,011

$1.640

$0.912

$0.839

-

Arrow

USA . 4,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.704

10k+ parts

-

4,250

-

-

$0.704

-

Element14

Singapore . 780 parts In-Stock

1+ parts

-

100+ parts

$1.010

1k+ parts

$0.705

10k+ parts

$0.603

780

-

$1.010

$0.705

$0.603

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.876

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.876

-

-

-

Digiode

USA . 1,927 parts In-Stock

1+ parts

$1.352

100+ parts

-

1k+ parts

-

10k+ parts

-

1,927

$1.352

-

-

-

Vyrian

USA . 10,014 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,014

-

-

-

-

TME

Poland . 4,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.190

10k+ parts

-

4,250

-

-

$1.190

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 10,018 parts In-Stock

1+ parts

$0.610

100+ parts

-

1k+ parts

-

10k+ parts

-

10,018

$0.610

-

-

-

Parana Technologies

USA . 1,252 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

$1.765

10k+ parts

-

1,252

$0.770

-

$1.765

-

DigiPath Technology Company

USA . 212 parts In-Stock

1+ parts

$0.848

100+ parts

$0.780

1k+ parts

-

10k+ parts

-

212

$0.848

$0.780

-

-

IDEA Electronic Components Group

UK . 2,326 parts In-Stock

1+ parts

$0.865

100+ parts

-

1k+ parts

$0.778

10k+ parts

-

2,326

$0.865

-

$0.778

-

ChromeModa Solutions

Germany . 261 parts In-Stock

1+ parts

$0.865

100+ parts

$0.709

1k+ parts

-

10k+ parts

-

261

$0.865

$0.709

-

-

Argo Parts USA

USA . 1,429 parts In-Stock

1+ parts

$0.876

100+ parts

-

1k+ parts

-

10k+ parts

-

1,429

$0.876

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.876

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.876

-

-

-

Continental Prestige Electronics

USA . 469 parts In-Stock

1+ parts

$0.876

100+ parts

-

1k+ parts

-

10k+ parts

$0.858

469

$0.876

-

-

$0.858

Corphita

USA . 1,196 parts In-Stock

1+ parts

$1.281

100+ parts

-

1k+ parts

-

10k+ parts

-

1,196

$1.281

-

-

-

Overview

Experience top-of-the-line performance with the CSD87503Q3ET by Texas Instruments, a high-quality Power FET perfect for switching applications. With 2 elements and a built-in diode, this N-channel transistor offers reliability and efficiency like no other. Whether you're looking to enhance your power system or optimize your circuit design, this enhancement mode transistor is the solution you've been searching for. Say goodbye to compromises and hello to superior performance with the CSD87503Q3ET.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring a longer lifespan and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and switching capabilities in electronic circuits.

Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for easy integration and versatile use in various applications requiring switching capabilities.

Transistor Application: SWITCHING

Optimized for fast switching speeds and efficient power management, making it ideal for applications requiring frequent on/off cycles.

Surface Mount: YES

Facilitates easy mounting onto circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 30 V

Ensures reliable operation within the specified voltage range, protecting the FET from electrical damage.

Maximum Pulsed Drain Current (IDM): 89 A

Capable of handling high current pulses, making it suitable for power applications with peak load requirements.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, offering reliability in various industrial applications.

Maximum Drain Current (ID): 10 A

Suitable for applications requiring moderate current flow, providing a balance between power handling capacity and efficiency.

Maximum Feedback Capacitance (Crss): 194 pF

Helps to minimize feedback issues and ensure stable performance in high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) CSD87503Q3ET attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

194 pF

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

89 A

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD87503Q3ET Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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