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CSD87503Q3E

Texas Instruments

CSD87503Q3E by Texas Instruments

CSD87503Q3E by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 89A IDM, and -55 to 150°C Operating Temperature range. With a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for high-power switching circuits.

Median Price

$1.230

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 46,478 parts In-Stock

1+ parts

$1.050

100+ parts

$0.808

1k+ parts

$0.425

10k+ parts

-

46,478

$1.050

$0.808

$0.425

-

DigiKey

USA . 4,025 parts In-Stock

1+ parts

$1.230

100+ parts

$0.715

1k+ parts

$0.621

10k+ parts

$0.577

4,025

$1.230

$0.715

$0.621

$0.577

Mouser Electronics

USA . 1,720 parts In-Stock

1+ parts

$1.230

100+ parts

$0.671

1k+ parts

$0.622

10k+ parts

$0.608

1,720

$1.230

$0.671

$0.622

$0.608

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,129 parts In-Stock

1+ parts

$0.998

100+ parts

-

1k+ parts

-

10k+ parts

-

2,129

$0.998

-

-

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Vyrian

USA . 3,208 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

3,208

$1.050

-

-

-

Cyclops Electronics Ltd

UK . 20,432 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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20,432

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 609 parts In-Stock

1+ parts

$0.918

100+ parts

-

1k+ parts

$1.837

10k+ parts

-

609

$0.918

-

$1.837

-

Corphita

USA . 2,362 parts In-Stock

1+ parts

$0.945

100+ parts

-

1k+ parts

-

10k+ parts

-

2,362

$0.945

-

-

-

DigiPath Technology Company

USA . 1,463 parts In-Stock

1+ parts

$1.010

100+ parts

$0.930

1k+ parts

-

10k+ parts

-

1,463

$1.010

$0.930

-

-

ChromeModa Solutions

Germany . 3,567 parts In-Stock

1+ parts

$1.031

100+ parts

$0.845

1k+ parts

-

10k+ parts

-

3,567

$1.031

$0.845

-

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IDEA Electronic Components Group

UK . 280 parts In-Stock

1+ parts

$1.031

100+ parts

-

1k+ parts

$0.928

10k+ parts

-

280

$1.031

-

$0.928

-

Native Components

USA . 602 parts In-Stock

1+ parts

$1.943

100+ parts

-

1k+ parts

-

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602

$1.943

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-

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Northwest PG Solutions

USA . 2,015 parts In-Stock

1+ parts

$2.137

100+ parts

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2,015

$2.137

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-

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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100+ parts

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25,000

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Kepictronics

USA . 23,047 parts In-Stock

1+ parts

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23,047

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Lixinc

USA . 6,875 parts In-Stock

1+ parts

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6,875

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A-Z Elektronik GmbH

Germany . 4,518 parts In-Stock

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4,518

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Alle Elektronik GmbH

Germany . 3,012 parts In-Stock

1+ parts

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3,012

-

-

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Overview

Enhance your electronic devices with the CSD87503Q3E by Texas Instruments, a high-quality Power FET perfect for switching applications. Manufactured by industry leader Texas Instruments, this N-Channel transistor offers reliability and efficiency. With a maximum pulsed drain current of 89A and a minimum DS breakdown voltage of 30V, this FET delivers superior performance. Its small outline package and common source configuration make it ideal for a range of applications. Upgrade your designs with the CSD87503Q3E and experience the benefits of cutting-edge technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the FET, ensuring longevity and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient operation and performance for a wide range of applications.

Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Enhances functionality by having multiple elements and a built-in diode, expanding the range of possible uses.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

With a high minimum breakdown voltage, this FET can handle higher voltages without being damaged.

Package Shape: SQUARE

The square shape allows for easier placement and alignment on circuit boards, optimizing space usage.

Terminal Form: NO LEAD

The lead-free terminal form is more environmentally friendly and compliant with regulations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control and efficiency in various applications.

No. of Elements: 2

Having 2 elements enhances the functionality and versatility of the FET for different applications.

Maximum Pulsed Drain Current (IDM): 89 A

High current capacity allows for handling of heavy loads and peak power demands.

No. of Terminals: 6

Having 6 terminals provides the necessary connections for proper functionality and integration in circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOSFET technology ensures high performance, efficiency, and reliability in operation.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the FET.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables operation in both extreme cold and hot environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The finish provides excellent conductivity, corrosion resistance, and durability for the terminals.

Maximum Drain Current (ID): 10 A

Capable of handling high drain currents, suitable for various high-power applications.

Terminal Position: DUAL

Dual terminal positions allow for flexibility in circuit designs and connections.

Case Connection: DRAIN

The drain connection type ensures proper functionality and efficient power handling.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during soldering processes, ensuring proper assembly.

Maximum Feedback Capacitance (Crss): 194 pF

Low feedback capacitance minimizes signal distortion and interference, improving overall performance.

Technical Specifications

Power Field Effect Transistors (FET) CSD87503Q3E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

194 pF

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

89 A

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD87503Q3E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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