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CDCLVD110AVF

Texas Instruments

CDCLVD110AVF by Texas Instruments

CDCLVD110AVF clock driver by Texas Instruments features 3 ns propagation delay, 2.5V nominal voltage, and 10 true outputs at up to 1100 MHz. Ideal for industrial applications requiring differential mux input conditioning and a low profile flatpack package with a temperature range of -40 to 85°C.

Median Price

$8.951

Lifecycle Status

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Arrow

USA . 172 parts In-Stock

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$6.004

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Verical

USA . 172 parts In-Stock

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Texas Instruments

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$10.860

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$9.486

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$6.542

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$10.860

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DigiKey

USA . 169 parts In-Stock

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$16.260

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$11.121

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Mouser Electronics

USA . 132 parts In-Stock

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$16.260

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$11.130

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$10.510

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Chip1Stop

Japan . 250 parts In-Stock

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Rochester

USA . 207 parts In-Stock

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$8.170

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$7.310

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$6.880

207

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$6.880

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Digiode

USA . 3,476 parts In-Stock

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$5.704

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Chip Stock

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Vyrian

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Connector Distribution Corp

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Right Parts Inc.

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Prism Electronics

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USA . 751 parts In-Stock

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$0.429

751

$0.447

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$0.429

Northwest PG Solutions

USA . 1,186 parts In-Stock

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$0.491

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$0.433

1,186

$0.491

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$0.433

Andel Nordic

Denmark . 907 parts In-Stock

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$4.805

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$4.613

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$4.613

907

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$4.613

$4.613

Corphita

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$5.404

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Component Stockers USA

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$13.430

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$9.140

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Parana Technologies

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DigiPath Technology Company

USA . 1,786 parts In-Stock

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$21.039

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$19.356

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IDEA Electronic Components Group

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$21.468

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$20.395

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Microchip USA

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$39.620

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$39.050

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$38.770

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Lixinc

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Overview

Unleash the power of precision clock distribution with the CDCLVD110AVF by Texas Instruments. Crafted with top-quality materials and cutting-edge technology, this clock driver offers unparalleled performance in a wide range of applications. Whether you're in need of differential mux input conditioning or 3-state output characteristics, this product delivers with a swift 3 ns propagation delay. Say goodbye to timing issues and hello to seamless synchronization with the CDCLVD110AVF. Elevate your projects with Texas Instruments' clock drivers & buffers and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and reliability to the product.

Propagation Delay At Nominal Supply: 3 ns

The low propagation delay ensures fast and efficient operation of the clock driver.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and facilitating automated assembly.

Input Conditioning: DIFFERENTIAL MUX

Differential multiplexer input conditioning ensures accurate and reliable data transmission.

Nominal Supply Voltage / Vsup (V): 2.5

Operating at a nominal supply voltage of 2.5V makes this clock driver compatible with a wide range of systems.

Load Capacitance (CL): 5 pF

Low load capacitance ensures minimal signal degradation and improved signal integrity.

Output Characteristics: 3-STATE

The 3-state output allows for high flexibility in controlling the output signal, making it suitable for various applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range of -40°C to 85°C ensures reliable performance in harsh environments.

Technical Specifications

Clock Drivers & Buffers CDCLVD110AVF attributes and parameters. Explore more Clock Drivers & Buffers devices from Texas Instruments

Specs

Family:

110

Input Conditioning:

DIFFERENTIAL MUX

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e4

Length:

7 mm

Load Capacitance (CL):

5 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

32

No. of True Outputs:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Packing Method:

TRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Maximum Power Supply Current (ICC):

160 mA

Propagation Delay At Nominal Supply:

3 ns

Propagation Delay (tpd):

3 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

Clock Driver

Maximum Supply Voltage (Vsup):

2.625 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Minimum fmax:

1100 MHz

Trade Compliance

CDCLVD110AVF Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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