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CD74HCT04M96G4

Texas Instruments

CD74HCT04M96G4 by Texas Instruments

CD74HCT04M96G4 by Texas Instruments is a CMOS logic gate with 6 functions, 29 ns propagation delay at 5V. It has a small outline package and operates in temperatures ranging from -55 to 125°C. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Digiode

USA . 4,955 parts In-Stock

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Vyrian

USA . 3,979 parts In-Stock

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Sensible Micro Corp

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North Shore Components

USA . 2,459 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Parana Technologies

USA . 1,405 parts In-Stock

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$12.564

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$13.017

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ChromeModa Solutions

Germany . 6,405 parts In-Stock

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$14.117

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$11.576

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IDEA Electronic Components Group

UK . 1,200 parts In-Stock

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$12.705

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AZTECH Wire

Italy . 191 parts In-Stock

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Corohmni

South Africa . 702 parts In-Stock

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One Stop Electronics

USA . 1,281 parts In-Stock

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Ampacity Inc.

Singapore . 517 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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Perfect Parts

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Corphita

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Bastille Electronics

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DigiPath Technology Company

USA . 376 parts In-Stock

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Overview

Experience seamless logic gate operations with the CD74HCT04M96G4 by Texas Instruments. Known for their high-quality components and reliable performance, Texas Instruments delivers top-notch products that exceed industry standards. Ideal for a wide range of applications, this logic gate offers fast propagation delay and low power consumption, making it a valuable addition to any project. Trust Texas Instruments to provide you with the best in logic gates for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and resistant to damage.

Propagation Delay At Nominal Supply: 29 ns

The low propagation delay ensures fast and efficient operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is commonly used in electronic circuits, ensuring compatibility and proper functionality in various applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections on the circuit board, reducing the risk of loose connections or signal interruptions.

Technical Specifications

Logic Gates CD74HCT04M96G4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

29 ns

Propagation Delay (tpd):

29 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD74HCT04M96G4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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