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CD4572UBPWE4

Texas Instruments

CD4572UBPWE4 by Texas Instruments

CD4572UBPWE4 by Texas Instruments is a CMOS logic gate with 4 functions, 200 ns propagation delay at 5V. It operates in temperatures ranging from -55 to 125 °C and has a package style of small outline, thin profile. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,060 parts In-Stock

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Digiode

USA . 288 parts In-Stock

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288

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Native Components

USA . 995 parts In-Stock

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$0.138

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$0.133

995

$0.138

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$0.133

Northwest PG Solutions

USA . 137 parts In-Stock

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$0.152

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One Stop Electronics

USA . 847 parts In-Stock

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$13.000

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847

$13.000

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AZTECH Wire

Italy . 204 parts In-Stock

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$19.599

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Parana Technologies

USA . 646 parts In-Stock

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$30.071

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$66.779

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DigiPath Technology Company

USA . 52 parts In-Stock

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$33.112

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$30.463

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ChromeModa Solutions

Germany . 3,838 parts In-Stock

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$33.788

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$27.706

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IDEA Electronic Components Group

UK . 1,588 parts In-Stock

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$33.788

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$32.099

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$30.409

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Corphita

USA . 3,792 parts In-Stock

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Microchip USA

USA . 203 parts In-Stock

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Overview

Unlock the power of advanced logic gates with the CD4572UBPWE4 by Texas Instruments. Renowned for their top-notch quality and innovative technology, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This versatile component offers customers unparalleled reliability, efficiency, and performance, making it the ideal choice for your next project. Experience seamless operation and exceptional results with the CD4572UBPWE4 - the perfect blend of quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to temperature fluctuations.

Propagation Delay At Nominal Supply: 200 ns

With a low propagation delay, this product ensures quick and efficient operation.

Surface Mount: YES

Being surface mountable, this product offers easy installation and compact design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration with existing systems convenient.

Load Capacitance (CL): 50 pF

Suitable load capacitance ensures stable performance and signal integrity.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the product to function reliably in various environments.

Technology: CMOS

The CMOS technology ensures low power consumption and high noise immunity, making the product efficient and reliable.

Terminal Pitch: 0.65 mm

With a small terminal pitch, this product allows for high-density mounting and space-saving designs.

Technical Specifications

Logic Gates CD4572UBPWE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

MIXED WITH ONE 2-INPUT NOR & ONE 2-INPUT NAND GATE

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

200 ns

Propagation Delay (tpd):

200 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

CD4572UBPWE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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