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CD4572UBF

Texas Instruments

CD4572UBF by Texas Instruments

CD4572UBF by Texas Instruments is a CMOS logic gate with 4 functions, 200 ns propagation delay at 5V. It operates in temperatures from -55 to 125 °C and has a load capacitance of 50 pF. Ideal for military-grade applications requiring high-speed signal processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,017 parts In-Stock

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Digiode

USA . 967 parts In-Stock

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Sogenti Electronics

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Native Components

USA . 258 parts In-Stock

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Northwest PG Solutions

USA . 1,646 parts In-Stock

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$0.110

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Parana Technologies

USA . 1,858 parts In-Stock

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IDEA Electronic Components Group

UK . 419 parts In-Stock

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$8.564

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ChromeModa Solutions

Germany . 45 parts In-Stock

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AZTECH Wire

Italy . 449 parts In-Stock

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One Stop Electronics

USA . 1,489 parts In-Stock

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Corphita

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Supply Digital

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DigiPath Technology Company

USA . 1,421 parts In-Stock

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ChipstoGo Electronic ltd

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Overview

Experience superior performance and reliability with the Texas Instruments CD4572UBF Logic Gates. Manufactured by a trusted industry leader, this product offers exceptional quality and precision for a wide range of applications. With 4 functions in one package, this logic gate boasts a fast propagation delay of 200ns, ensuring efficient operation. Whether you're designing circuits for military-grade applications or everyday electronics, the CD4572UBF provides unmatched value, benefits, and advantages to meet your needs. Trust in Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Propagation Delay At Nominal Supply: 200 ns

Fast propagation delay ensures quick processing and response times, making this product efficient for high-speed operations.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common supply voltages, making integration into existing systems easier.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without performance degradation, suitable for a wide range of applications.

Technology: CMOS

Uses CMOS technology which offers low power consumption, high noise immunity, and compatibility with various logic families, making it a versatile choice.

Technical Specifications

Logic Gates CD4572UBF attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

MIXED WITH ONE 2-INPUT NOR & ONE 2-INPUT NAND GATE

Family:

4000/14000/40000

JESD-30 Code:

R-GDIP-T16

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

.36 Amp

No. of Functions:

4

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

200 ns

Propagation Delay (tpd):

200 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CD4572UBF Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-14-431-5642, 5962144315642

NIIN

144315642

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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