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C5509ZOOME1C2103DR

Texas Instruments

C5509ZOOME1C2103DR by Texas Instruments

C5509ZOOME1C2103DR by Texas Instruments is a DSP with 16-bit data RAM, 128K RAM words, and 20 MHz clock frequency. Ideal for industrial applications, it features a low profile package style, flash ROM programmability, and boundary scan capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,525 parts In-Stock

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5,525

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Digiode

USA . 2,161 parts In-Stock

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2,161

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,995 parts In-Stock

1+ parts

$2.393

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-

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1,995

$2.393

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One Stop Electronics

USA . 386 parts In-Stock

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$7.000

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386

$7.000

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AZTECH Wire

Italy . 272 parts In-Stock

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$13.716

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272

$13.716

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Corohmni

South Africa . 1,045 parts In-Stock

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$20.717

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1,045

$20.717

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Parana Technologies

USA . 179 parts In-Stock

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$38.631

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179

$38.631

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DigiPath Technology Company

USA . 1,733 parts In-Stock

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$42.538

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1,733

$42.538

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ChromeModa Solutions

Germany . 1,356 parts In-Stock

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$43.406

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$35.593

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$43.406

$35.593

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IDEA Electronic Components Group

UK . 1,288 parts In-Stock

1+ parts

$43.406

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$41.236

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$39.065

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1,288

$43.406

$41.236

$39.065

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Corphita

USA . 1,628 parts In-Stock

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Native Components

USA . 81 parts In-Stock

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$2.110

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Overview

Experience the superior performance and reliability of Texas Instruments with the C5509ZOOME1C2103DR Digital Signal Processor. Perfect for a wide range of applications, this DSP offers unparalleled precision and efficiency. With advanced features and cutting-edge technology, this product provides exceptional value to customers looking for high-quality components. Trust in Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations. Elevate your projects with the C5509ZOOME1C2103DR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and heat resistance, making the product suitable for various environments and applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving time and cost in production.

Maximum Supply Voltage: 1.65 V

Having a maximum supply voltage of 1.65V ensures safe operation and protection of the components from overvoltage.

RAM Words: 128K

With a large RAM capacity of 128K words, the DSP can handle complex calculations and processing tasks efficiently.

Maximum Clock Frequency: 20 MHz

A high maximum clock frequency of 20MHz enables fast signal processing, making it suitable for real-time applications.

Temperature Grade: INDUSTRIAL

Being industrial-grade means the DSP can operate in harsh environmental conditions with reliability and stability.

ROM Programmability: FLASH

Flash ROM allows for easy reprogramming and updating of firmware, providing flexibility and adaptability to changing requirements.

Technical Specifications

Digital Signal Processors (DSPs) C5509ZOOME1C2103DR attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

8

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

20 MHz

External Data Bus Width:

16

Format:

FIXED POINT

Integrated Cache:

NO

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B179

JESD-609 Code:

e1

Length:

12 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

179

No. of Timers:

2

On Chip Data RAM Width:

16

On Chip Program ROM Width:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA179(UNSPEC)

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

RAM Words:

128K

ROM Programmability:

FLASH

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.55 V

Nominal Supply Voltage:

1.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Peripheral IC Type:

Trade Compliance

C5509ZOOME1C2103DR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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