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BUF634F

Texas Instruments

BUF634F by Texas Instruments

BUF634F by Texas Instruments is a buffer amplifier with a max input offset voltage of 100000 uV and max average bias current of 20 uA. It operates at a nominal voltage of +-15 V, has a bandwidth of 180 MHz, and is ideal for industrial applications requiring high-speed buffering in compact designs.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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VNN

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Chip Stock

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QIE Inc.

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Beltway Electronics Company

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Nova Conductors

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Martec Srl

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J & M Industries LLC

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Sinequanon

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Mil-Aero Solutions, Inc.

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Sogenti Electronics

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Corohmni

South Africa . 161 parts In-Stock

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Parana Technologies

USA . 2,188 parts In-Stock

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ChromeModa Solutions

Germany . 1,852 parts In-Stock

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IDEA Electronic Components Group

UK . 362 parts In-Stock

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One Stop Electronics

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Semicontronic

India . 644 parts In-Stock

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AZTECH Wire

Italy . 605 parts In-Stock

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Authorized Procurement Solutions

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Kepictronics

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Bastille Electronics

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Perfect Parts

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DigiPath Technology Company

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Assy Fe

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Overview

Discover the unmatched performance and reliability of the BUF634F by Texas Instruments, a leading manufacturer in the industry. As a high-quality Buffer Amplifier, this product offers exceptional value with its versatile applications in audio systems, instrumentation, and more. With a wide bandwidth and low input bias current, the BUF634F ensures optimal signal integrity and precision in your designs. Trust in Texas Instruments to deliver top-notch products that exceed expectations, and elevate your projects to new heights with the BUF634F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Nominal Bandwidth (3dB): 180 MHz

High bandwidth allows for efficient signal processing and transmission.

Maximum Input Offset Voltage: 100000 uV

Low offset voltage ensures accurate and precise amplification of signals.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage for efficient performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications.

Technical Specifications

Buffer Amplifiers BUF634F attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

180 MHz

Nominal Slew Rate:

2000 V/us

Input Offset Voltage Limit:

100 mV

Peak Bias Current:

20 uA

Maximum Bias Current (IIB) @25 °C:

20 uA

Operational Characteristics

Maximum Supply Current:

20 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.4 in (10.16 mm)

Width:

0.351 in (8.925 mm)

Maximum Seated Height:

0.202 in (5.13 mm)

Total Terminals:

5

Terminal Pitch:

0.067 in (1.7 mm)

Terminal Position:

Single

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PSSO-G5

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SMSIP5H,.6,67TB

Trade Compliance

BUF634F Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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