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74LVTH16501DGGRE4

Texas Instruments

74LVTH16501DGGRE4 by Texas Instruments

74LVTH16501DGGRE4 by Texas Instruments is an 18-bit bus driver with a propagation delay of 3.7 ns at 3.3V, suitable for industrial applications. It features a max I (ol) of 64A, operates b/w -40 to 85°C, and has a terminal pitch of 0.5mm for compact designs.

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,326 parts In-Stock

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Digiode

USA . 958 parts In-Stock

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Native Components

USA . 795 parts In-Stock

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$2.139

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$2.139

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Northwest PG Solutions

USA . 852 parts In-Stock

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$2.353

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$2.353

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Parana Technologies

USA . 392 parts In-Stock

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$7.908

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$8.465

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One Stop Electronics

USA . 1,339 parts In-Stock

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$8.000

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Andel Nordic

Denmark . 3,827 parts In-Stock

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$8.401

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$8.065

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$8.065

3,827

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$8.065

DigiPath Technology Company

USA . 1,368 parts In-Stock

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$8.707

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$8.011

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$8.707

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ChromeModa Solutions

Germany . 1,564 parts In-Stock

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$8.885

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$7.286

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IDEA Electronic Components Group

UK . 394 parts In-Stock

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$8.885

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$8.441

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$7.996

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AZTECH Wire

Italy . 558 parts In-Stock

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$17.372

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Component Stockers USA

USA . 2,890 parts In-Stock

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Corphita

USA . 1,929 parts In-Stock

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Microchip USA

USA . 1,622 parts In-Stock

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Overview

Discover the Texas Instruments 74LVTH16501DGGRE4, a top-notch Bus Driver & Transceiver perfect for a wide range of applications. With Texas Instruments' reputation for quality and innovation, this product offers reliable performance, fast propagation delay, and versatile 3-STATE output characteristics. Ideal for industrial use, this 18-bit device operates at a nominal voltage of 3.3V and boasts a compact design for space-conscious applications. Experience seamless data transmission and efficient signal control with the 74LVTH16501DGGRE4, a must-have component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-lasting performance.

Propagation Delay At Nominal Supply: 3.7 ns

Fast propagation delay ensures quick data transmission.

Surface Mount: YES

Ease of installation and space-saving benefits.

Package Shape: RECTANGULAR

Compact design for efficient use of space.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common supply voltages.

Load Capacitance (CL): 50 pF

Suitable for driving capacitive loads.

Power Supplies (V): 3.3

Efficient power management.

Output Characteristics: 3-STATE

Allows for high impedance output for bus sharing.

Minimum Operating Temperature: -40 °C

Operational in a wide range of temperature environments.

Maximum Operating Temperature: 85 °C

Reliable performance even in high-temperature conditions.

Technology: BICMOS

Combines the advantages of bipolar and CMOS technologies for enhanced performance.

Technical Specifications

Bus Driver & Transceivers 74LVTH16501DGGRE4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH INDEPENDENT OUTPUT ENABLE FOR EACH DIRECTION

Control Type:

INDEPENDENT CONTROL

Count Direction:

BIDIRECTIONAL

Family:

LVT

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e4

Length:

14 mm

Load Capacitance (CL):

50 pF

Maximum I (ol):

64 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

18

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

56

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.3,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

5 mA

Propagation Delay At Nominal Supply:

3.7 ns

Propagation Delay (tpd):

5.7 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Translation:

N/A

Trigger Type:

POSITIVE EDGE

Width:

6.1 mm

Trade Compliance

74LVTH16501DGGRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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