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74LVC2G157DCURE4

Texas Instruments

74LVC2G157DCURE4 by Texas Instruments

74LVC2G157DCURE4 by Texas Instruments is a CMOS Multiplexer with 2 inputs, 6 ns propagation delay, and 3-STATE output. It operates at a supply voltage range of 1.65V to 5.5V, making it ideal for industrial applications requiring fast signal switching in compact designs. This small outline package with dual terminals and very thin profile is suitable for surface mount assembly processes.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 4,811 parts In-Stock

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Digiode

USA . 2,659 parts In-Stock

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VNN

France . 1,156 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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AZTECH Wire

Italy . 755 parts In-Stock

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$14.354

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Parana Technologies

USA . 1,417 parts In-Stock

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$19.497

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$19.506

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DigiPath Technology Company

USA . 2,283 parts In-Stock

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$21.469

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ChromeModa Solutions

Germany . 1,322 parts In-Stock

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$21.907

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$17.964

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IDEA Electronic Components Group

UK . 1,161 parts In-Stock

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$19.716

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Corohmni

South Africa . 923 parts In-Stock

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Ampacity Inc.

Singapore . 1,474 parts In-Stock

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One Stop Electronics

USA . 693 parts In-Stock

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Argo Parts USA

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Perfect Parts

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Aranea Global

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Corphita

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Continental Prestige Electronics

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Microchip USA

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Overview

Upgrade your electronic projects with the Texas Instruments 74LVC2G157DCURE4 multiplexer & demultiplexer. With a reputation for high-quality products, Texas Instruments delivers reliability and performance in every component. This versatile device is designed for seamless integration, offering fast propagation delay and low power consumption. Ideal for a wide range of applications, this product provides value and efficiency for all your circuit design needs. Unlock the potential of your projects with the Texas Instruments 74LVC2G157DCURE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body ensures durability and reliability of the product.

Propagation Delay At Nominal Supply: 6 ns

Low propagation delay at nominal supply voltage ensures fast and efficient operation of the multiplexer/demultiplexer.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB.

No. of Inputs: 2

Having 2 inputs allows for flexibility in signal routing and processing.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation.

Output Characteristics: 3-STATE

3-STATE output allows for high impedance state, providing flexibility in signal routing.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in a wide range of temperature environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Multiplexer & Demultiplexer 74LVC2G157DCURE4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Outputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

74LVC2G157DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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