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74CBTLV3857DBQRE4

Texas Instruments

74CBTLV3857DBQRE4 by Texas Instruments

74CBTLV3857DBQRE4 by Texas Instruments is a 10-bit bus driver with 3.3V supply voltage, 0.25ns propagation delay, and 85°C max operating temp. Ideal for industrial applications requiring CMOS technology, it features a small outline package with dual terminals and true output polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,318 parts In-Stock

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Digiode

USA . 1,870 parts In-Stock

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Andel Nordic

Denmark . 121 parts In-Stock

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$7.499

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$7.199

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$7.199

121

$7.499

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$7.199

$7.199

Parana Technologies

USA . 1,825 parts In-Stock

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$13.749

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$14.236

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DigiPath Technology Company

USA . 1,988 parts In-Stock

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$15.139

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ChromeModa Solutions

Germany . 4,583 parts In-Stock

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$15.448

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$12.667

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IDEA Electronic Components Group

UK . 1,042 parts In-Stock

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$15.448

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$14.676

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$13.903

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1,042

$15.448

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$13.903

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AZTECH Wire

Italy . 492 parts In-Stock

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$17.013

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One Stop Electronics

USA . 1,319 parts In-Stock

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$31.000

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Corphita

USA . 2,431 parts In-Stock

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Northwest PG Solutions

USA . 1,263 parts In-Stock

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Microchip USA

USA . 322 parts In-Stock

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Native Components

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Overview

Unlock the power of seamless data transmission with the Texas Instruments 74CBTLV3857DBQRE4 Bus Driver & Transceivers. Crafted with precision and expertise by a renowned manufacturer, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this versatile component ensures smooth and efficient communication. Experience the value and benefits of top-notch quality with the 74CBTLV3857DBQRE4, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the bus driver, ensuring reliable performance even in harsh operating conditions.

Surface Mount: YES

Enables easy installation on PCBs, saving assembly time and space.

No. of Bits: 10

Offers a high level of precision and accuracy in data transmission and reception.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for efficient and stable operation of the bus driver.

Propagation Delay (tpd): 0.25 ns

Ensures fast signal transmission, reducing latency in the communication process.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperatures, ensuring reliability and durability.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation, making it energy-efficient and reliable.

Technical Specifications

Bus Driver & Transceivers 74CBTLV3857DBQRE4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE BUS SWITCH

Family:

CBTLV/3B

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.65 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Bits:

10

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP24,.24

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay (tpd):

.25 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

74CBTLV3857DBQRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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