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74CBTD16210DGVRE4

Texas Instruments

74CBTD16210DGVRE4 by Texas Instruments

74CBTD16210DGVRE4 by Texas Instruments is a CMOS bus driver with 10 bits and 2 functions. It has a propagation delay of 0.25 ns, operates at temperatures b/w -40 to 85 °C, and supports a supply voltage range of 4.5V to 5.5V. Ideal for industrial applications requiring bidirectional control with low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,625 parts In-Stock

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Digiode

USA . 1,321 parts In-Stock

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1,321

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Distributors (Availability)

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Native Components

USA . 348 parts In-Stock

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$1.980

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348

$1.980

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Northwest PG Solutions

USA . 701 parts In-Stock

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$2.178

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701

$2.178

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Andel Nordic

Denmark . 119 parts In-Stock

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$3.146

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$3.020

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$3.020

119

$3.146

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$3.020

$3.020

One Stop Electronics

USA . 1,114 parts In-Stock

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$9.000

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$9.000

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AZTECH Wire

Italy . 535 parts In-Stock

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$19.162

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535

$19.162

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Parana Technologies

USA . 2,294 parts In-Stock

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$19.821

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$19.779

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$19.821

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$19.779

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DigiPath Technology Company

USA . 658 parts In-Stock

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$21.826

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$20.080

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658

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ChromeModa Solutions

Germany . 3,964 parts In-Stock

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$22.271

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$18.262

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IDEA Electronic Components Group

UK . 2,104 parts In-Stock

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$22.271

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$21.157

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$20.044

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Corphita

USA . 1,688 parts In-Stock

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Microchip USA

USA . 1,510 parts In-Stock

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Overview

Enhance your electronic designs with the 74CBTD16210DGVRE4 by Texas Instruments, a high-quality bus driver and transceiver perfect for a wide range of applications. With Texas Instruments' reputation for excellence in manufacturing, you can trust in the reliability and performance of this product. Delivering fast propagation delay and true output polarity, this versatile component offers exceptional value and benefits to customers looking to optimize their systems. Upgrade your projects with this top-notch solution and experience the advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to damage, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 0.25 ns

Low propagation delay ensures fast signal transmission, making this product suitable for high-speed communication applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort in the assembly process.

No. of Functions: 2

Having multiple functions in a single component increases efficiency and saves space on the board, making it a cost-effective choice.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, compatible with most electronic systems for seamless integration.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the product to function in extreme conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making this product energy-efficient and reliable.

Terminal Form: GULL WING

Gull wing terminals provide a strong mechanical connection and are ideal for surface mounting, enhancing the durability and reliability of the product.

Technical Specifications

Bus Driver & Transceivers 74CBTD16210DGVRE4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Control Type:

ENABLE LOW

Count Direction:

BIDIRECTIONAL

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

9.7 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

10

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.25,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

1.5 mA

Propagation Delay At Nominal Supply:

.25 ns

Propagation Delay (tpd):

.25 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Width:

4.4 mm

Trade Compliance

74CBTD16210DGVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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