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74ACT11004PWG4

Texas Instruments

74ACT11004PWG4 by Texas Instruments

74ACT11004PWG4 by Texas Instruments is a logic gate with 6 functions, 9.7 ns propagation delay at 5V, and 50 pF load capacitance. It is used in industrial applications requiring fast signal processing and operates b/w -40 to 85°C temperature range.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,241 parts In-Stock

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Digiode

USA . 4,663 parts In-Stock

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4,663

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Northwest PG Solutions

USA . 2,155 parts In-Stock

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$3.322

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$3.322

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One Stop Electronics

USA . 220 parts In-Stock

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$4.000

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$4.000

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AZTECH Wire

Italy . 589 parts In-Stock

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$15.960

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Parana Technologies

USA . 1,130 parts In-Stock

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$29.779

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$63.123

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DigiPath Technology Company

USA . 1,554 parts In-Stock

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$32.791

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$30.168

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1,554

$32.791

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ChromeModa Solutions

Germany . 992 parts In-Stock

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$33.460

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$27.437

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992

$33.460

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IDEA Electronic Components Group

UK . 290 parts In-Stock

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$33.460

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$31.787

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$30.114

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Microchip USA

USA . 2,350 parts In-Stock

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Corphita

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Native Components

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Overview

Discover the quality and innovation of Texas Instruments with the 74ACT11004PWG4 logic gates. Designed for efficiency and reliability, these components offer 6 functions in a small outline package that is easy to integrate into various applications. With a nominal supply voltage of 5V, low propagation delay, and high maximum power supply current, this product delivers exceptional performance while maintaining a compact form factor. Trust Texas Instruments to provide cutting-edge solutions for your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Propagation Delay At Nominal Supply: 9.7 ns

Fast propagation delay ensures quick response times in logic operations.

Surface Mount: YES

Surface mount capability provides easy and secure installation on PCBs.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage makes integration into existing systems simple.

Maximum I (ol): 24 Amp

High maximum output current allows for driving heavier loads.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliable performance in various environments.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates 74ACT11004PWG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

9.7 ns

Propagation Delay (tpd):

9.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

74ACT11004PWG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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