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5962-9096503MUX

Texas Instruments

5962-9096503MUX by Texas Instruments

Texas Instruments' 5962-9096503MUX FPGA features 547 CLBs, 1200 gates, and a max clock frequency of 37 MHz. Ideal for military applications due to its MIL grading, this CMOS technology device operates b/w -55°C to 125°C with a supply voltage range of 4.5V to 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,103 parts In-Stock

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4,103

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Digiode

USA . 2,675 parts In-Stock

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2,675

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Distributors (Availability)

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Native Components

USA . 15 parts In-Stock

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$2.130

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$2.130

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Northwest PG Solutions

USA . 992 parts In-Stock

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$2.343

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992

$2.343

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AZTECH Wire

Italy . 422 parts In-Stock

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$11.267

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One Stop Electronics

USA . 350 parts In-Stock

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$24.000

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350

$24.000

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Parana Technologies

USA . 2,335 parts In-Stock

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$163.017

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$15,138.587

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$146.715

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2,335

$163.017

$15,138.587

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DigiPath Technology Company

USA . 925 parts In-Stock

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$179.502

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925

$179.502

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ChromeModa Solutions

Germany . 2,630 parts In-Stock

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$183.165

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$150.195

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IDEA Electronic Components Group

UK . 2,150 parts In-Stock

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$183.165

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$174.007

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$164.848

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Corphita

USA . 3,992 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Texas Instruments 5962-9096503MUX Field Programmable Gate Array. Crafted with precision and expertise, this FPGA offers unmatched quality and reliability for a wide range of applications. From military-grade operations to industrial automation, this versatile device provides exceptional performance and flexibility. Experience seamless integration and superior functionality with the 5962-9096503MUX, delivering value and benefits that exceed expectations. Upgrade your projects with confidence and efficiency using this top-of-the-line FPGA from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and can withstand harsh environmental conditions, making the FPGA durable and reliable.

Maximum Supply Voltage: 5.5 V

Higher maximum supply voltage allows for flexibility in power supply options and compatibility with a wider range of systems.

No. of CLBs: 547

Having a large number of Configurable Logic Blocks (CLBs) provides versatility and allows for more complex designs to be implemented.

Technology Used: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption and high noise immunity, making the FPGA efficient and reliable.

Maximum Combinatorial Delay of a CLB: 5.5 ns

Low combinational delay ensures fast operation and responsiveness of the FPGA, making it suitable for real-time applications.

Maximum Clock Frequency: 37 MHz

High clock frequency allows for faster processing and higher performance capabilities, making the FPGA suitable for demanding tasks.

Technical Specifications

Field Programmable Gate Arrays (FPGA) 5962-9096503MUX attributes and parameters. Explore more Field Programmable Gate Arrays (FPGA) devices from Texas Instruments

IC Features

Programmable IC Type:

No. of CLBs:

547

No. of Equivalent Gates:

1200

Maximum Clock Frequency:

37 MHz

CLB Maximum Delay:

5.5 ns

Technology:

CMOS

Organization:

547 CLBS, 1200 Gates

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage:

5.5 V

Temperature and Environmental Ratings

Minimum Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Temperature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mountable:

No

Package Style:

Grid Array

Package Code:

PGA

Package Shape:

Length:

27.94 mm

Width:

27.94 mm

Maximum Seated Height:

4.318 mm

Terminal Characteristcs

Terminal Position:

Perpendicular

Terminal Style:

Terminal Pitch:

2.54 mm

No. of Terminals:

84

Standards

JESD-30 Code:

S-CPGA-P84

Qualified:

No

Trade Compliance

5962-9096503MUX Programmable ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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