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2N706A

Texas Instruments

2N706A by Texas Instruments

2N706A by Texas Instruments is an NPN transistor with a max power dissipation of 1W and a min DC current gain of 20. It operates at temperatures up to 175°C and can handle a max collector current of 0.05A. This transistor is commonly used in various electronic applications requiring low-power amplification.

Median Price

$1.602

Lifecycle Status

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TEDSS.com

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Parana Technologies

USA . 319 parts In-Stock

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DigiPath Technology Company

USA . 85 parts In-Stock

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ChromeModa Solutions

Germany . 3,936 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

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Component Stockers USA

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Microchip USA

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Glotronic Ltd.

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Overview

Unleash the power of innovation with the 2N706A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability in their products. The 2N706A is a game-changer in the category of Other Function Transistors, offering customers unmatched value and benefits. Whether used in amplifiers, switches, or signal processing applications, this NPN transistor provides exceptional performance and versatility. Trust Texas Instruments to enhance your projects with cutting-edge technology and superior functionality.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in applications where a positive voltage is required at the collector relative to the emitter. This makes the transistor compatible with a wide range of circuits and systems.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits using this transistor. It reduces complexity and makes the product user-friendly.

Maximum Power Dissipation (Abs): 1 W

The high maximum power dissipation of 1 W allows the transistor to handle moderate power levels effectively. This makes it suitable for a variety of applications where power dissipation is a concern.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor can provide sufficient amplification for many circuits. It ensures reliable performance and signal amplification.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows the transistor to operate in demanding environments without overheating. This ensures the reliability and longevity of the product.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05 A allows the transistor to handle moderate current levels. It makes the product suitable for low to medium power applications where current flow is a consideration.

Technical Specifications

Other Function Transistors 2N706A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2N706A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-883-9495, 5961008839495, 5961-00-870-7823, 5961008707823, 5961-00-999-6017, 5961009996017, 5961-00-405-9958, 5961004059958, 5961-00-879-3089, 5961008793089, 5961-00-842-6937, 5961008426937, 5961-15-058-4438, 5961150584438, 5961-99-118-3975, 5961991183975

NIIN

008839495, 008707823, 009996017, 004059958, 008793089, 008426937, 150584438, 991183975

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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