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2N706B

Texas Instruments

2N706B by Texas Instruments

2N706B by Texas Instruments is an NPN transistor with a max power dissipation of 1W and a min DC current gain of 20. It operates at temperatures up to 175°C and has a max collector current of 0.05A. This transistor is commonly used in various electronic applications requiring low-power amplification.

Median Price

$11.695

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 376 parts In-Stock

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$3.400

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TEDSS.com

USA . 100 parts In-Stock

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$19.990

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100

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PUI

USA . 27,565 parts In-Stock

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Vyrian

USA . 7,215 parts In-Stock

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Digiode

USA . 2,270 parts In-Stock

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Electronic Expediters

USA . 171 parts In-Stock

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Holdelec - ElecDif-Pro

France . 46 parts In-Stock

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Resion

USA . 24 parts In-Stock

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Electronics Depot

USA . 17 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 13 parts In-Stock

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Bristol Electronics

USA . 6 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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MISTER SPROCKETS

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 828 parts In-Stock

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$0.966

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$1.865

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828

$0.966

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$1.865

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DigiPath Technology Company

USA . 1,884 parts In-Stock

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$1.063

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$0.978

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1,884

$1.063

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IDEA Electronic Components Group

UK . 2,004 parts In-Stock

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$1.085

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$0.976

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2,004

$1.085

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$0.976

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ChromeModa Solutions

Germany . 1,881 parts In-Stock

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$1.085

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$0.890

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1,881

$1.085

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AZTECH Wire

Italy . 695 parts In-Stock

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$15.003

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695

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One Stop Electronics

USA . 1,021 parts In-Stock

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$30.050

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Corphita

USA . 4,185 parts In-Stock

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Supply Digital

USA . 2,661 parts In-Stock

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Northwest PG Solutions

USA . 946 parts In-Stock

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946

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Native Components

USA . 675 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the 2N706B by Texas Instruments. With a reputation for excellence, Texas Instruments delivers top-quality components like this NPN transistor that can handle up to 1W of power dissipation. Suitable for a variety of applications, this single-channel transistor offers a minimum DC current gain of 20 and a maximum collector current of 0.05A. Trust in Texas Instruments for reliable performance and trust in the 2N706B for exceptional value and benefits to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and require less complex circuitry compared to multiple configuration transistors.

Maximum Power Dissipation (Abs): 1 W

The high maximum power dissipation allows for the transistor to handle high power loads without overheating or getting damaged.

Minimum DC Current Gain (hFE): 20

Transistors with a higher minimum DC current gain provide better amplification and signal processing capabilities in electronic circuits.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures that the transistor can perform reliably in a wide range of environmental conditions without overheating.

Maximum Collector Current (IC): 0.05 A

The high maximum collector current allows the transistor to handle larger current loads, making it suitable for various high-power applications.

Technical Specifications

Other Function Transistors 2N706B attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2N706B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-883-9495, 5961008839495, 5961-00-842-6937, 5961008426937, 5961-14-284-8975, 5961142848975

NIIN

008839495, 008426937, 142848975

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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