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2N702

Texas Instruments

2N702 by Texas Instruments

2N702 by Texas Instruments is an NPN transistor with a max power dissipation of 0.3W and a min DC current gain of 20. It operates at temperatures up to 175°C, making it suitable for applications requiring a collector current of up to 0.05A and a transition frequency of 70MHz.

Median Price

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 6,110 parts In-Stock

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Digiode

USA . 2,580 parts In-Stock

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Anansix

USA . 1,642 parts In-Stock

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Electronic Expediters

USA . 377 parts In-Stock

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Prism Electronics

USA . 231 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 71 parts In-Stock

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Holdelec - ElecDif-Pro

France . 71 parts In-Stock

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Resion

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LittleDiode

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Parana Technologies

USA . 243 parts In-Stock

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$0.677

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$1.724

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DigiPath Technology Company

USA . 753 parts In-Stock

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$0.746

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$0.686

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753

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IDEA Electronic Components Group

UK . 1,594 parts In-Stock

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$0.761

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$0.685

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ChromeModa Solutions

Germany . 912 parts In-Stock

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$0.761

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$0.624

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$0.761

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AZTECH Wire

Italy . 500 parts In-Stock

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$16.181

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One Stop Electronics

USA . 207 parts In-Stock

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$30.050

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Corphita

USA . 5,093 parts In-Stock

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Native Components

USA . 746 parts In-Stock

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Northwest PG Solutions

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Overview

Unleash the power of innovation with the 2N702 by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments guarantees top-notch quality and reliability. The 2N702, part of the Other Function Transistors category, offers unmatched performance and versatility. Whether you're designing consumer electronics, industrial equipment, or automotive systems, this NPN transistor is the ideal choice for your application needs. Experience the benefits of Texas Instruments' expertise and precision engineering with the 2N702 - where quality meets value.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, suitable for many low to medium power applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures efficient amplification of input signals, providing reliable performance in signal processing applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows this transistor to withstand elevated temperatures, ensuring stable performance in harsh environments.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current levels, making it suitable for various low to medium current applications.

Nominal Transition Frequency (fT): 70 MHz

A high nominal transition frequency of 70MHz indicates fast switching speeds, making this transistor ideal for high-frequency signal processing and amplification applications.

Technical Specifications

Other Function Transistors 2N702 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N702 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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