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2N703

Texas Instruments

2N703 by Texas Instruments

2N703 by Texas Instruments is an NPN transistor with a max power dissipation of 0.3W, hFE of 40, and fT of 70MHz. It is used in applications requiring low collector current such as signal amplification in electronic circuits.

Median Price

$13.570

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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TEDSS.com

USA . 121 parts In-Stock

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$5.000

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American Microsemiconductor Inc.

USA . 42 parts In-Stock

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$22.140

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Vyrian

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Anansix

USA . 1,376 parts In-Stock

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Digiode

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Resion

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Halfin

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LittleDiode

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Electronic Expediters

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Parana Technologies

USA . 160 parts In-Stock

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$2.233

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DigiPath Technology Company

USA . 1,790 parts In-Stock

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$1.766

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$1.625

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ChromeModa Solutions

Germany . 4,969 parts In-Stock

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IDEA Electronic Components Group

UK . 1,882 parts In-Stock

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AZTECH Wire

Italy . 223 parts In-Stock

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One Stop Electronics

USA . 1,064 parts In-Stock

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Corphita

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Northwest PG Solutions

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Supply Digital

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Native Components

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Overview

Elevate your electronic designs with the 2N703 by Texas Instruments. With a legacy of innovation and quality, Texas Instruments brings you this NPN transistor that offers reliability and performance. Ideal for a variety of applications, this transistor provides a seamless solution for your circuit needs. Experience the value and benefits of the 2N703 as it delivers efficiency and precision to your projects. Trust Texas Instruments to bring you cutting-edge technology that empowers your creations.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easy to use and can be quickly integrated into circuits, simplifying design and assembly processes.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capabilities, allowing for signal amplification with minimal distortion.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05A indicates a high current handling capability, making this transistor suitable for power switching applications.

Nominal Transition Frequency (fT): 70 MHz

A nominal transition frequency of 70MHz indicates high-speed performance, allowing for fast switching speeds and high-frequency operation.

Technical Specifications

Other Function Transistors 2N703 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N703 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-836-0376, 5961008360376, 5961-00-824-8448, 5961008248448, 5961-00-988-9793, 5961009889793, 5961-99-141-9569, 5961991419569

NIIN

008360376, 008248448, 009889793, 991419569

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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