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2N706C

Raytheon Semiconductor

2N706C by Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .05 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Other Function Transistors 2N706C attributes and parameters. Explore more Other Function Transistors devices from Raytheon Semiconductor

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Nominal Transition Frequency (fT):

Trade Compliance

2N706C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-870-7823, 5961008707823

NIIN

008707823

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