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2N709

Texas Instruments

2N709 by Texas Instruments

2N709 by Texas Instruments is an NPN transistor with a max power dissipation of 0.3W and min DC current gain of 20. It operates up to 200°C, with a transition frequency of 600MHz. Ideal for applications requiring high-frequency switching in electronic circuits.

Median Price

$1.990

Lifecycle Status

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29

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1k+

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American Microsemiconductor Inc.

USA . 2,342 parts In-Stock

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Freelance Electronics

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Electronic Expediters

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Vyrian

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Digiode

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Holdelec - ElecDif-Pro

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ECAB

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Corel Iberica Componentes, S.L.

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Fibra_Brandt Electronic GMBH

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LittleDiode

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MISTER SPROCKETS

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Mil-Aero Solutions, Inc.

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Huijzer Components

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First Choice Components Inc.

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ICP Electronique

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Nova Conductors

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Electro Mavin

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Sinequanon

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Resion

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GES GmbH

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Component Electronics Inc.

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LWI Electronics Inc

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Prism Electronics

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Microfarads

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Manoshevitz Elec. Sales

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Parana Technologies

USA . 2,288 parts In-Stock

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DigiPath Technology Company

USA . 2,295 parts In-Stock

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IDEA Electronic Components Group

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ChromeModa Solutions

Germany . 324 parts In-Stock

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AZTECH Wire

Italy . 846 parts In-Stock

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One Stop Electronics

USA . 965 parts In-Stock

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Aranea Global

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Corphita

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Supply Digital

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Assy Fe

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Kepictronics

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Perfect Parts

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RTC Component Inc.

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Overview

Unleash the power of the 2N709 by Texas Instruments, a top-of-the-line NPN transistor that delivers exceptional quality and performance. As a leading manufacturer in the industry, Texas Instruments ensures superior reliability and precision engineering in every product they create. The 2N709 is perfect for a wide range of applications in electronics, offering unmatched value and versatility. Experience the benefits of this high-quality transistor and take your projects to the next level with Texas Instruments.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easy to implement and troubleshoot, making them user-friendly and ideal for hobbyists or beginners.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels and is suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures efficient signal amplification and stability in the circuit, making this transistor a reliable choice for signal processing.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures and is suitable for applications where heat dissipation is a concern.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency of 600 MHz allows for high-speed switching and signal processing, making this transistor ideal for RF and high-frequency applications.

Technical Specifications

Other Function Transistors 2N709 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N709 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-005-7749, 5961000057749, 5961-00-051-8088, 5961000518088, 5961-00-900-0967, 5961009000967, 5961-00-813-3253, 5961008133253, 5961-00-937-5384, 5961009375384, 5961-00-984-3156, 5961009843156, 5961-00-995-7824, 5961009957824, 5961-99-038-2703, 5961990382703, 5961-99-118-1876, 5961991181876, 5961-14-252-5059, 5961142525059, 5961-15-060-6255, 5961150606255, 5961-15-071-4267, 5961150714267

NIIN

000057749, 000518088, 009000967, 008133253, 009375384, 009843156, 009957824, 990382703, 991181876, 142525059, 150606255, 150714267

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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