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2N3811

Texas Instruments

2N3811 by Texas Instruments

2N3811 by Texas Instruments is a PNP BJT with hFE of 300, VCE of 60V, and fT of 100MHz. Ideal for amplifier applications due to its separate dual-element configuration. Its metal package and wire terminals make it suitable for high-temperature environments up to 200°C.

Median Price

$11.596

Lifecycle Status

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29

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Ace Electronics

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American Microsemiconductor Inc.

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Legend Electronics Inc.

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PC Components Company LLC

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First Choice Components Inc.

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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Northwest PG Solutions

USA . 2,264 parts In-Stock

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Parana Technologies

USA . 919 parts In-Stock

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DigiPath Technology Company

USA . 2,373 parts In-Stock

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ChromeModa Solutions

Germany . 2,829 parts In-Stock

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IDEA Electronic Components Group

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Native Components

USA . 1,853 parts In-Stock

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One Stop Electronics

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Corohmni

South Africa . 193 parts In-Stock

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AZTECH Wire

Italy . 271 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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UHIMA Technologies

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Overview

Elevate your amplifier projects with the Texas Instruments 2N3811 Small Signal Bipolar Junction Transistor. Manufactured with top-quality materials and advanced technology, this PNP transistor offers unparalleled performance and reliability. Ideal for a variety of applications, such as amplifiers, this transistor boasts a high DC current gain and a maximum operating temperature of 200°C. With its unique design and exceptional functionality, the 2N3811 is a must-have component for any electronics enthusiast or professional looking to take their projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and mechanical strength, making the transistor durable and efficient in heat dissipation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier applications, making this product suitable for amplification purposes.

Configuration: SEPARATE, 2 ELEMENTS

Separate configuration with 2 elements allows for better control and flexibility in circuit design, enabling more precise amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: ROUND

Round package shape provides compact and efficient packaging, saving space and allowing for easy mounting in various electronic devices.

Terminal Form: WIRE

Wire terminals provide easy and reliable connections, simplifying the installation and maintenance of the transistor in electronic circuits.

Minimum DC Current Gain (hFE): 300

High minimum DC current gain ensures stable and consistent amplification of input signals, making this transistor reliable in amplification tasks.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to withstand higher temperatures, increasing its reliability and lifespan in various operating conditions.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating allows the transistor to handle higher voltages, making it suitable for amplification tasks that require higher voltage levels.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability, ensuring stable and consistent performance of the transistor in amplification applications.

Maximum Collector Current (IC): 0.05 A

Maximum collector current rating of 0.05 A allows the transistor to handle moderate current levels, making it suitable for low to medium power amplification tasks.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and convenient PCB mounting, simplifying the integration of the transistor in electronic circuits.

Case Connection: ISOLATED

Isolated case connection helps in preventing electrical interference and short circuits, ensuring reliable and safe operation of the transistor in electronic circuits.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz indicates the transistor's capability to handle higher frequency signals, making it suitable for audio and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3811 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3811 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5905-01-659-3697, 5905016593697, 5961-01-367-2825, 5961013672825, 5961-00-936-7591, 5961009367591, 5961-99-644-0859, 5961996440859, 5961-99-118-3261, 5961991183261

NIIN

016593697, 013672825, 009367591, 996440859, 991183261

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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