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X0202NA

STMicroelectronics

X0202NA by STMicroelectronics

X0202NA by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for high-voltage applications. It supports up to 800 V repetitive peak reverse voltage and handles non-repetitive peak on-state currents of 25 A. With a max operating temp of 125 °C, it's suitable for demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,877 parts In-Stock

1+ parts

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3,877

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Digiode

USA . 2,600 parts In-Stock

1+ parts

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2,600

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Anansix

USA . 2,010 parts In-Stock

1+ parts

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2,010

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,229 parts In-Stock

1+ parts

$3.377

100+ parts

-

1k+ parts

$3.040

10k+ parts

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1,229

$3.377

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$3.040

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MKK Technologies

India . 1,960 parts In-Stock

1+ parts

$6.351

100+ parts

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1,960

$6.351

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DigiPath Technology Company

USA . 1,960 parts In-Stock

1+ parts

$6.351

100+ parts

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1,960

$6.351

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Parana Technologies

USA . 439 parts In-Stock

1+ parts

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100+ parts

$4.038

1k+ parts

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439

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$4.038

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Corphita

USA . 293 parts In-Stock

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293

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Overview

Unlock the power of innovation with the X0202NA from STMicroelectronics! Renowned for their commitment to superior quality and reliability, STMicroelectronics delivers a top-tier SCR solution perfect for diverse applications—from motor control to lighting systems. The X0202NA ensures efficient performance with minimal leakage, ensuring longevity and stability in your projects. Elevate your designs today and experience the unmatched reliability that sets STMicroelectronics apart!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

With a low gate trigger current requirement, this SCR minimizes power consumption, making it efficient for low-power applications.

Configuration: SINGLE

The single configuration allows for straightforward integration in circuits, providing a simplified design process for engineers.

Non-Repetitive Peak On-state Current: 25 A

The high peak on-state current capability enables this SCR to handle significant load demands, suitable for high-power applications.

Package Shape: ROUND

The round package shape is ideal for space-constrained designs and facilitates easy handling during production.

Terminal Form: WIRE

Wire terminal form offers flexibility in connection options and can enhance the ease of installation in various setups.

Maximum On-state Current: 1.25 A

A maximum on-state current of 1.25 A allows for practical operation in standard electronic circuits, providing reliable performance.

Maximum Leakage Current: 0.2 mA

Low leakage current minimizes power loss and heat generation, enhancing the longevity and reliability of the device.

Repetitive Peak Reverse Voltage: 800 V

High reverse voltage capability enables the SCR to be used in demanding applications requiring robust performance under voltage stress.

Number of Terminals: 3

The three-terminal design simplifies circuit configurations and allows for flexible circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor which is advantageous in densely packed electronic assemblies.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliable operation in harsh environments, making this SCR suited for industrial applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier makes this device excellent for controlling power in various applications, including motor control and light dimming.

Minimum Operating Temperature: -55 °C

The ability to function at low temperatures allows for use in extreme cold conditions, broadening the range of applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals enhances solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning aids in compact layout designs and simplifies PCB mounting for efficient use of space.

Maximum RMS On-state Current: 1.25 A

The ability to handle a maximum RMS current of 1.25 A ensures stable operation and performance in standard electronic circuits.

Maximum DC Gate Trigger Voltage: 0.8 V

With a low trigger voltage, this SCR reduces the risk of damage to control circuits and promotes safer operation.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage ensures the SCR can withstand significant reverse voltages, making it reliable in transient conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 15 V/µs

A high critical rate ensures the device can handle fast voltage changes, which is crucial for various switching applications.

Maximum Holding Current: 5 mA

Low holding current allows for easier turn-off capabilities, contributing to effective control in circuit applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0202NA attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

15 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

25 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.25 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0202NA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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