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X0202BN

STMicroelectronics

X0202BN by STMicroelectronics

X0202BN by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for surface mount applications. It features a max on-state current of 1.4 A, non-repetitive peak on-state current of 25 A, and operates b/w -40 °C to 125°C. This device is perfect for controlling high-power loads efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corel Iberica Componentes, S.L.

Spain . 39,781 parts In-Stock

1+ parts

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39,781

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Vyrian

USA . 3,093 parts In-Stock

1+ parts

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3,093

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Digiode

USA . 2,474 parts In-Stock

1+ parts

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2,474

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Anansix

USA . 2,084 parts In-Stock

1+ parts

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2,084

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,341 parts In-Stock

1+ parts

$2.982

100+ parts

-

1k+ parts

$2.684

10k+ parts

-

2,341

$2.982

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$2.684

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MKK Technologies

India . 2,075 parts In-Stock

1+ parts

$5.607

100+ parts

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2,075

$5.607

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DigiPath Technology Company

USA . 2,075 parts In-Stock

1+ parts

$5.607

100+ parts

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2,075

$5.607

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Assy Fe

Spain . 39,781 parts In-Stock

1+ parts

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39,781

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 4,036 parts In-Stock

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4,036

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Parana Technologies

USA . 675 parts In-Stock

1+ parts

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100+ parts

$3.565

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675

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$3.565

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Overview

Elevate your designs with the X0202BN from STMicroelectronics, a leader in semiconductor innovation. This Silicon Controlled Rectifier offers unmatched reliability and efficiency, making it ideal for various applications, from power management to motor control. With its robust performance and compact design, it seamlessly integrates into your projects, delivering exceptional value and durability. Choose the X0202BN to empower your solutions with quality that stands the test of time!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection against environmental factors, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current ensures minimal power consumption, enhancing overall energy efficiency in circuit designs.

Configuration: SINGLE

The single configuration simplifies integration into circuits, allowing for straightforward implementation in electronic devices.

Non Repetitive Peak On-state Current: 25 A

This high non-repetitive peak current capacity allows the SCR to handle short-term overcurrent conditions effectively.

Surface Mount: YES

Surface mount capability facilitates compact design and automated assembly processes in modern electronics.

Package Shape: RECTANGULAR

A rectangular package shape optimizes space efficiency on PCBs, making it easier to integrate into designs.

Terminal Form: GULL WING

Gull wing terminals enable reliable solder connections and ease of mounting, enhancing the device's reliability and assembly.

Maximum On-state Current: 1.4 A

The maximum on-state current rating allows for effective control in various switching applications without overheating.

Maximum Leakage Current: 0.005 mA

A low leakage current reduces energy loss and improves the efficiency of the circuit, making it ideal for power-sensitive applications.

Repetitive Peak Reverse Voltage: 200 V

The capability to handle up to 200 V reverse voltage makes this SCR suitable for high-voltage applications and improves system robustness.

No. of Terminals: 4

Four terminals provide flexibility in design and enable effective control and connections in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density placement on PCBs, making this SCR ideal for compact devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability and performance in demanding thermal environments.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers excellent control of current flow, making it ideal for power switching applications.

Minimum Operating Temperature: -40 °C

This wide operating temperature range makes the device suitable for extreme environments, ensuring adaptability in various applications.

Terminal Finish: MATTE TIN

A matte tin terminal finish enhances solderability and reduces oxidation, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal positions facilitate easier layout design on PCBs, improving circuit integration and assembly efficiency.

Maximum RMS On-state Current: 1.4 A

The RMS on-state current rating ensures that the SCR can handle continuous loads efficiently, contributing to reliable operation.

Maximum DC Gate Trigger Voltage: 0.8 V

A low trigger voltage makes it easily activated in low-voltage applications, enhancing compatibility with various control systems.

Repetitive Peak Off-state Voltage: 200 V

The ability to withstand 200 V off-state voltage ensures reliability and durability, making it suitable for high voltage switching applications.

Maximum Holding Current: 5 mA

A low holding current means less power consumption when in the conduction state, making it efficient for low-power applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0202BN attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Non Repetitive Peak On-state Current:

25 A

No. of Elements:

1

No. of Terminals:

4

Maximum On-state Current:

1.4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.4 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0202BN Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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