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X0202NA2BL2

STMicroelectronics

X0202NA2BL2 by STMicroelectronics

X0202NA2BL2 by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for high-voltage applications. It supports up to 800 V repetitive peak reverse voltage and handles currents of 25 A non-repetitive peak. Operating b/w -40 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 10,000 parts In-Stock

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EBV Elektronik

Germany . 4,000 parts In-Stock

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4,000

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

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-

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$0.197

12,000

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-

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$0.197

TME

Poland . 6,000 parts In-Stock

1+ parts

-

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$0.083

6,000

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$0.083

Digiode

USA . 4,710 parts In-Stock

1+ parts

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4,710

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Vyrian

USA . 3,787 parts In-Stock

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3,787

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Anansix

USA . 1,079 parts In-Stock

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1,079

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,000 parts In-Stock

1+ parts

$4.447

100+ parts

-

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$4.003

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-

2,000

$4.447

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$4.003

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MKK Technologies

India . 1,813 parts In-Stock

1+ parts

$8.363

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1,813

$8.363

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DigiPath Technology Company

USA . 1,813 parts In-Stock

1+ parts

$8.363

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1,813

$8.363

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AZTECH Wire

Italy . 66 parts In-Stock

1+ parts

$15.690

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66

$15.690

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Corphita

USA . 4,277 parts In-Stock

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4,277

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Parana Technologies

USA . 1,796 parts In-Stock

1+ parts

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$5.317

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1,796

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$5.317

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Overview

Unlock exceptional performance with the X0202NA2BL2 from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) is expertly designed for reliability and efficiency, making it ideal for a variety of applications, including power control and motor drive systems. Benefit from impressive durability, reduced leakage, and a compact package that simplifies integration. Elevate your projects with proven technology that delivers consistent results and superior value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and robustness, making the SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current requirement enhances energy efficiency and allows for easy control in low-power applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various systems.

Non Repetitive Peak On-state Current: 25 A

This high current rating allows the SCR to handle substantial loads, making it ideal for heavy-duty applications.

Package Shape: ROUND

The round shape aids in thermal dissipation, enhancing the performance and reliability of the SCR.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical strength and enhance ease of soldering during assembly.

Maximum On-state Current: 0.8 A

This current rating supports its use in a variety of general-purpose applications, offering versatility.

Maximum Leakage Current: 0.5 mA

Low leakage current contributes to higher efficiency and reduces power loss in the circuit.

Repetitive Peak Reverse Voltage: 800 V

This voltage capability ensures safe operation in high-voltage applications, enhancing reliability.

No. of Terminals: 3

The three terminals design allows for greater flexibility in circuit configuration and applications.

Package Style (Meter): CYLINDRICAL

The cylindrical packaging style aids in efficient heat management, crucial for high-performance applications.

Maximum Operating Temperature: 125 °C

The ability to operate at elevated temperatures increases the range of applications in harsh environments.

Trigger Device Type: SCR

SCRs are renowned for their efficiency in rectification and switching applications, making this product a preferred choice.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable performance in extreme cold conditions, suitable for diverse environments.

Terminal Finish: TIN

Tin plating on terminals enhances solderability, ensuring a reliable electrical connection.

Terminal Position: BOTTOM

Bottom-terminal positioning facilitates compact designs and is advantageous for space-constrained applications.

Maximum RMS On-state Current: 1.25 A

This RMS current capability expands its application in power control and switching circuits.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage enhances compatibility with various control circuits, simplifying design.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating ensures reliability in switching applications across different loads.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/µs

This attribute enhances the device's capability to handle fast switching applications without failure.

Maximum Holding Current: 5 mA

A low holding current guarantees stable operation, reducing the risk of unintended triggering.

Technical Specifications

Silicon Controlled Rectifiers (SCR) X0202NA2BL2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

Non Repetitive Peak On-state Current:

25 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.25 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

X0202NA2BL2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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