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TYN410RG

STMicroelectronics

TYN410RG by STMicroelectronics

TYN410RG by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max on-state current of 10 A, non-repetitive peak on-state current of 105 A, and operates b/w -40 °C to 125 °C. This device is suitable for high-voltage switching with a repetitive peak reverse voltage of 400 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,410 parts In-Stock

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4,410

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Vyrian

USA . 2,451 parts In-Stock

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2,451

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Anansix

USA . 672 parts In-Stock

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672

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ComSIT Distribution GmbH

Germany . 493 parts In-Stock

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493

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Avant Electronics Limited

UK . 200 parts In-Stock

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200

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 522 parts In-Stock

1+ parts

$2.083

100+ parts

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$1.875

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522

$2.083

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$1.875

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MKK Technologies

India . 1,140 parts In-Stock

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$3.917

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$3.917

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DigiPath Technology Company

USA . 1,140 parts In-Stock

1+ parts

$3.917

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1,140

$3.917

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AZTECH Wire

Italy . 876 parts In-Stock

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$16.740

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876

$16.740

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Corphita

USA . 4,448 parts In-Stock

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Kepictronics

USA . 1,500 parts In-Stock

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1,500

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Parana Technologies

USA . 1,254 parts In-Stock

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$2.490

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1,254

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$2.490

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Overview

Experience unmatched reliability and performance with the TYN410RG from STMicroelectronics, a leader in semiconductor innovation. This robust Silicon Controlled Rectifier (SCR) delivers exceptional control for various applications, from industrial automation to power management systems. With its impressive current handling and minimal leakage, the TYN410RG ensures energy efficiency and longevity, empowering you to optimize your designs while enjoying peace of mind from ST's renowned quality and support.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures good thermal stability and durability, making the SCR reliable for long-term applications.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current requirement allows for easier interfacing with control circuits and reduces overall power consumption.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easy to integrate into various applications.

Non Repetitive Peak On-state Current: 105 A

This high peak current capability allows the SCR to handle significant surges in load, providing enhanced performance in challenging conditions.

Package Shape: RECTANGULAR

The rectangular shape of the package aids in efficient space utilization on PCBs, contributing to compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easier soldering, ensuring reliable connections in high-vibration environments.

Maximum On-state Current: 10 A

An on-state current rating of 10 A makes this SCR suitable for a range of applications that require reliable current handling.

Maximum Leakage Current: 0.01 mA

Minimal leakage current contributes to energy efficiency and reduces power loss in the circuit, enhancing overall system performance.

Repetitive Peak Reverse Voltage: 400 V

This high reverse voltage rating allows the SCR to be used safely in demanding high-voltage applications.

No. of Terminals: 3

The three-terminal design allows for versatile connection options, facilitating flexible circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides robust support and efficient heat dissipation, crucial for high-power applications.

Maximum Operating Temperature: 125 °C

A high operating temperature rating ensures reliable performance in harsh environments without thermal failure.

Trigger Device Type: SCR

As an SCR, this product can handle high-power applications effectively, switching on and off with precision.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature makes this SCR ideal for use in extreme cold conditions, ensuring reliability.

Terminal Position: SINGLE

Single terminal position simplifies connections and reduces the complexity of circuit layouts.

Maximum RMS On-state Current: 10 A

With a maximum RMS on-state current of 10 A, this SCR suits a variety of AC power control applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage makes this SCR compatible with various control systems, enhancing versatility.

Case Connection: ANODE

The anode connection type allows for straightforward integration into power control circuits.

Repetitive Peak Off-state Voltage: 400 V

This rating provides assurance that the SCR can handle voltage spikes without failure, ideal for power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high rate of voltage rise ensures safe operation during switching, minimizing the risk of unwanted turn-on.

Maximum Holding Current: 30 mA

A low holding current allows for efficient current management in circuits, reducing unnecessary power usage.

Nominal Circuit Commutated Turn-off Time: 70 µs

A quick turn-off time enhances the SCR's performance in fast-switching applications, improving system responsiveness.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN410RG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

105 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TYN410RG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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