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TS944ID

STMicroelectronics

TS944ID by STMicroelectronics

TS944ID by STMicroelectronics is a micropower operational amplifier featuring a max input offset voltage of 10 mV, low bias current of 0.15 nA, and operates within -40 °C to 85°C. Ideal for industrial applications, it supports dual supply voltages of 3/5 V. Its compact design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,588 parts In-Stock

1+ parts

-

100+ parts

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12,588

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Digiode

USA . 3,852 parts In-Stock

1+ parts

-

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-

1k+ parts

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3,852

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Halfin

Belgium . 1,880 parts In-Stock

1+ parts

-

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1,880

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Anansix

USA . 1,317 parts In-Stock

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-

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1,317

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 701 parts In-Stock

1+ parts

$1.501

100+ parts

-

1k+ parts

$1.351

10k+ parts

-

701

$1.501

-

$1.351

-

MKK Technologies

India . 2,293 parts In-Stock

1+ parts

$2.823

100+ parts

-

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2,293

$2.823

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DigiPath Technology Company

USA . 2,293 parts In-Stock

1+ parts

$2.823

100+ parts

-

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2,293

$2.823

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AZTECH Wire

Italy . 1,102 parts In-Stock

1+ parts

$20.780

100+ parts

-

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1,102

$20.780

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Microchip USA

USA . 128 parts In-Stock

1+ parts

$23.413

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-

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128

$23.413

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Component Stockers USA

USA . 561 parts In-Stock

1+ parts

$99.990

100+ parts

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561

$99.990

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RC Electronics

USA . 11,165 parts In-Stock

1+ parts

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11,165

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Corphita

USA . 2,778 parts In-Stock

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2,778

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Vigor

Singapore . 1,785 parts In-Stock

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1,785

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Parana Technologies

USA . 1,088 parts In-Stock

1+ parts

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100+ parts

$1.795

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1,088

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$1.795

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Overview

Elevate your projects with the TS944ID operational amplifier from STMicroelectronics, a trusted leader in innovation and reliability. Designed for precision and efficiency, this versatile Op Amp excels in diverse applications, delivering exceptional performance with minimal power consumption. Enjoy seamless integration and superior quality, ensuring your designs meet the highest standards while benefiting from robust support and extensive industry expertise. Discover the power of excellence today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, making it suitable for various applications.

Maximum Input Offset Voltage: 10000 uV

Allows for high precision measurements, ensuring minimal error in applications.

Maximum Average Bias Current (IIB): 0.00015 uA

Low bias current contributes to higher accuracy and lower power consumption.

Surface Mount: YES

Facilitates efficient assembly in modern electronic designs, saving board space.

No. of Functions: 4

Provides flexibility in circuit design, allowing multiple functionalities in one component.

Package Shape: RECTANGULAR

Optimized for placement on PCBs, ensuring efficient use of space.

Nominal Common Mode Reject Ratio: 85 dB

High CMRR reduces interference from common noise sources, enhancing signal integrity.

Nominal Supply Voltage / Vsup (V): 3

Low supply voltage is ideal for battery-operated and low-power applications.

Power Supplies (V): 3/5

Flexible operating voltage range allows for compatibility with various systems.

No. of Terminals: 14

Provides ample connection points, making it versatile for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact size enables integration in space-constrained applications.

Maximum Supply Voltage Limit: 12 V

Allows robust operation within a wide voltage range, enhancing durability.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications due to high thermal tolerance.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

Ensures consistent performance and low noise in precision measurement applications.

Frequency Compensation: YES

Enables stable operation across a range of frequencies, crucial for oscillator circuits.

Minimum Operating Temperature: -40 °C

Designed for extreme conditions, making it ideal for outdoor and rugged environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Facilitates easy integration into double-sided PCBs, enhancing design flexibility.

Maximum Seated Height: 1.75 mm

Low profile allows for streamlined designs in compact electronic devices.

Width: 3.9 mm

Narrow footprint promotes dense component placement, maximizing PCB real estate.

Micropower: YES

Ideal for low-power applications, significantly extending battery life.

Maximum Time At Peak Reflow Temperature (s): 40

Compatible with modern manufacturing processes, ensuring reliable solder joints.

Peak Reflow Temperature °C: 260

Robust thermal profile supports various soldering methods, facilitating efficient assembly.

Length: 8.65 mm

Compact length makes it suitable for applications where space is at a premium.

Temperature Grade: INDUSTRIAL

Built for durability, ensuring reliable performance in harsh environments.

Low-Bias: YES

Minimized bias current is critical for precision in low-signal applications.

Nominal Unity Gain Bandwidth: 10 kHz

Suitable for a range of applications requiring moderate bandwidth without sacrificing stability.

Technology: BICMOS

Combines the advantages of both bipolar and CMOS technologies for superior performance.

Terminal Form: GULL WING

Common terminal style that allows for easy soldering and reliable connections.

Amplifier Type: OPERATIONAL AMPLIFIER

Versatile component suitable for a wide array of applications in analog signal processing.

Maximum Supply Current: 0.0074 mA

Very low supply current enhances energy efficiency, making it ideal for battery-powered devices.

Architecture: VOLTAGE-FEEDBACK

Supports a wide variety of configurations, providing flexibility in circuit designs.

Packing Method: TUBE

Ensures safe transport and storage while facilitating easy handling in production.

Nominal Slow Rate: 4500 V/us

High slew rate enables accurate signal tracking, essential for dynamic applications.

Terminal Pitch: 1.27 mm

Standard pitch allows for compatibility with a wide range of PCB layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS944ID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

4500 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

7.4 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS944ID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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