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TS932ID

STMicroelectronics

TS932ID by STMicroelectronics

TS932ID by STMicroelectronics is a dual operational amplifier featuring a max input offset voltage of 15 mV and low bias current of 0.3 nA, ideal for precision applications. It operates within a supply range of 3-12 V and supports industrial temperature grades from -40 °C to 85°C. Its compact SO8 package makes it suitable for space-constrained designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Vyrian

USA . 10,522 parts In-Stock

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Digiode

USA . 3,491 parts In-Stock

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Anansix

USA . 772 parts In-Stock

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A&K Electronics

USA . 533 parts In-Stock

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533

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Rotakorn

Sweden . 533 parts In-Stock

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Bristol Electronics

USA . 533 parts In-Stock

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533

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ComSIT Distribution GmbH

Germany . 301 parts In-Stock

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R&J Components

USA . 120 parts In-Stock

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IDEA Electronic Components Group

UK . 756 parts In-Stock

1+ parts

$2.954

100+ parts

-

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$2.659

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756

$2.954

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$2.659

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MKK Technologies

India . 1,077 parts In-Stock

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$5.555

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$5.555

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DigiPath Technology Company

USA . 1,077 parts In-Stock

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$5.555

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$5.555

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AZTECH Wire

Italy . 647 parts In-Stock

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$9.720

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Microchip USA

USA . 429 parts In-Stock

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$24.765

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A-Z Elektronik GmbH

Germany . 7,262 parts In-Stock

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Vigor

Singapore . 4,032 parts In-Stock

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Corphita

USA . 4,016 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 2,226 parts In-Stock

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$3.532

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Kepictronics

USA . 322 parts In-Stock

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Assy Fe

Spain . 100 parts In-Stock

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Overview

Elevate your designs with the TS932ID from STMicroelectronics, a top-tier operational amplifier that combines superb performance and reliability. With its low bias current and impressive common mode rejection ratio, it ensures precision in diverse applications, from industrial automation to medical devices. Backed by STMicroelectronics' renowned quality and innovation, the TS932ID delivers exceptional value, empowering engineers to create cutting-edge solutions with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and resistance to various environmental factors, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 15000 uV

A low maximum input offset voltage ensures high accuracy in signal processing, making this op-amp reliable for precision applications.

Maximum Average Bias Current (IIB): 0.0003 uA

Ultra-low bias current minimizes error and reduces power consumption, ideal for battery-powered devices.

Surface Mount: YES

Surface mount capability allows for increased design flexibility and efficient use of PCB space.

No. of Functions: 2

Having multiple functions in a single package provides versatility in circuits, saving space and cost.

Package Shape: RECTANGULAR

The rectangular shape is suitable for standard layouts in various designs, ensuring ease of integration.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode reject ratio improves performance in noisy environments, enhancing signal integrity.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low nominal supply voltage is advantageous for portable and energy-efficient designs.

Power Supplies (V): 3/5

The ability to operate with varying supply voltages offers design flexibility for different applications.

No. of Terminals: 8

With 8 terminals, the component is versatile enough for various circuit configurations and functions.

Package Style (Meter): SMALL OUTLINE

The small outline package reduces space requirements on the PCB, making it suitable for compact electronic devices.

Maximum Supply Voltage Limit: 12 V

The capability to handle up to 12V maximizes usability in various circuit designs without compromising performance.

Maximum Operating Temperature: 85 °C

Rated for high operating temperatures, this op-amp is suitable for industrial applications where heat is a factor.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

This extremely low current at room temperature ensures minimal impact on circuit performance.

Frequency Compensation: YES

Built-in frequency compensation stabilizes the amplifier across a range of frequencies, enhancing performance.

Minimum Operating Temperature: -40 °C

The capability to operate in low temperatures makes this op-amp suitable for harsh environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish ensures excellent conductivity and resistance to corrosion, enhancing reliability.

Terminal Position: DUAL

Dual terminal positioning simplifies PCB layout and facilitates easier soldering.

Maximum Seated Height: 1.75 mm

A low seated height allows for a compact design, crucial for space-constrained applications.

Width: 3.9 mm

A narrow width contributes to a smaller overall footprint on the PCB, accommodating dense layouts.

Micropower: YES

Designated micropower usage minimizes energy consumption, making it ideal for battery-operated devices.

Length: 4.9 mm

The small length enhances integration possibilities and makes it suitable for various PCB designs.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications, the temperature grade ensures reliability in critical environments.

Low-Bias: YES

The low-bias characteristic contributes to accuracy and stability in precision applications.

Nominal Unity Gain Bandwidth: 100 kHz

A high unity gain bandwidth allows for efficient signal amplification across a broad frequency range.

Technology: BICMOS

BICMOS technology combines the benefits of Bipolar and CMOS processes, enhancing performance and minimizing power consumption.

Terminal Form: GULL WING

Gull-wing terminals provide easy mounting and stable connections, facilitating better soldering and reliability.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is suitable for a wide range of applications including amplification, filtering, and signal conditioning.

Maximum Supply Current: 0.066 mA

Minimal supply current further enhances energy efficiency, making this product ideal for low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture ensures high stability and predictability in circuit performance.

Packing Method: TUBE

The tube packing method protects the components during transport and handling, ensuring product integrity.

Nominal Slow Rate: 0.5 V/us

A nominal slew rate allows for adequate response time in dynamic applications without distortion.

Terminal Pitch: 1.27 mm

A 1.27 mm terminal pitch is standard for many PCB designs, simplifying layout and assembly.

Technical Specifications

Operational Amplifiers (Op Amps) TS932ID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

15000 uV

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

66 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS932ID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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