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TS932AIDT

STMicroelectronics

TS932AIDT by STMicroelectronics

TS932AIDT by STMicroelectronics is a micropower operational amplifier featuring a max input offset voltage of 10 mV and an average bias current of just 0.3 nA. It operates within a supply range of 3-12 V, making it ideal for industrial applications. With a nominal CMRR of 85 dB, it ensures high precision in signal processing tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,039 parts In-Stock

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4,039

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Anansix

USA . 1,928 parts In-Stock

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1,928

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Greenchips

USA . 1,334 parts In-Stock

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1,334

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SIE Connect GmbH - GreenChips

Germany . 1,334 parts In-Stock

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1,334

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Digiode

USA . 105 parts In-Stock

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105

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 28 parts In-Stock

1+ parts

$2.311

100+ parts

-

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$2.080

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28

$2.311

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$2.080

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MKK Technologies

India . 1,011 parts In-Stock

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$4.346

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$4.346

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DigiPath Technology Company

USA . 1,011 parts In-Stock

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$4.346

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1,011

$4.346

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Microchip USA

USA . 356 parts In-Stock

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$6.484

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356

$6.484

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AZTECH Wire

Italy . 597 parts In-Stock

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$11.750

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597

$11.750

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A-Z Elektronik GmbH

Germany . 7,056 parts In-Stock

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Corphita

USA . 2,820 parts In-Stock

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2,820

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Parana Technologies

USA . 1,300 parts In-Stock

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$2.763

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$2.763

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Vigor

Singapore . 1,219 parts In-Stock

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Overview

Elevate your designs with the TS932AIDT from STMicroelectronics, where precision meets reliability. This dual operational amplifier ensures exceptional performance across a range of applications, from industrial automation to consumer electronics. Built with cutting-edge BICMOS technology, it offers low bias currents and a wide temperature range, guaranteeing efficiency and stability. Experience unmatched quality and innovation that enhances your projects while maximizing value and minimizing power consumption.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental stress, making it suitable for various applications.

Maximum Input Offset Voltage: 10000 uV

A maximum input offset voltage of 10 mV implies that the Op Amp can maintain a reasonable level of accuracy in applications where precise signal amplification is required.

Maximum Average Bias Current (IIB): 0.0003 uA

This extremely low average bias current ensures minimal error in precision applications, making it ideal for low-power usage.

Surface Mount: YES

Being a surface mount component allows for easier integration into compact circuit designs and improves overall manufacturing efficiency.

No. of Functions: 2

Having multiple functions makes this Op Amp versatile for different circuit configurations, potentially reducing the component count.

Package Shape: RECTANGULAR

A rectangular package shape enables efficient use of PCB space and facilitates high-density mounting.

Nominal Common Mode Reject Ratio: 85 dB

An 85 dB common mode rejection ratio indicates excellent performance in rejecting noise and interference, making it suitable for sensitive applications.

Nominal Supply Voltage / Vsup (V): 3

A low nominal supply voltage of 3V helps to minimize power consumption, making it suitable for battery-operated devices.

Power Supplies (V): 3/5

Dual voltage supply options (3V and 5V) enhance flexibility in system design and allow compatibility with various applications.

No. of Terminals: 8

An 8-terminal configuration facilitates easy connection and integration into different circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is excellent for space-constrained applications, allowing for compact designs.

Maximum Supply Voltage Limit: 12 V

A maximum supply voltage limit of 12V provides safe operation across a range of applications without risking component damage.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C supports reliability in harsh environments, ensuring the Op Amp performs well under demanding conditions.

Maximum Bias Current (IIB) @ 25 °C: 0.00015 uA

This very low bias current at room temperature aids in reducing thermal noise, making it perfect for high-precision analog circuits.

Frequency Compensation: YES

Built-in frequency compensation allows for stable operation across a range of conditions, making it suitable for applications requiring reliable performance.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C indicates robustness for industrial applications where extreme temperature variations are expected.

Terminal Finish: NICKEL PALLADIUM GOLD

The gold finish on the terminals ensures superior conductivity and corrosion resistance, enhancing the longevity of connections.

Terminal Position: DUAL

Dual terminal positioning allows for greater flexibility in circuit layout and design, making integration easier.

Maximum Seated Height: 1.75 mm

A low seated height contributes to compact designs and improves reliability by reducing potential mechanical stress on the component.

Width: 3.9 mm

A width of 3.9 mm provides a slim profile suitable for space-constrained electronics.

Micropower: YES

Micropower consumption is essential for battery-powered devices, extending the life of portable applications.

Length: 4.9 mm

The compact length allows for efficient placement in tight circuit layouts while maintaining performance.

Temperature Grade: INDUSTRIAL

An industrial temperature grade ensures reliability and performance in demanding environments typical in industrial applications.

Low-Bias: YES

Low-bias characteristics provide improved accuracy and performance in sensitive measurement circuits.

Nominal Unity Gain Bandwidth: 100 kHz

A unity gain bandwidth of 100 kHz enables proper functionality in a wide range of applications, including audio and signal processing.

Technology: BICMOS

BICMOS technology combines the best attributes of both bipolar and CMOS processes, offering high speed, low power, and low noise characteristics.

Terminal Form: GULL WING

The gull wing terminal form provides good mechanical strength and ease of soldering, enhancing the reliability of PCB assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it can be used for a variety of applications including signal conditioning, filtering, and mathematical operations.

Maximum Supply Current: 0.066 mA

Low supply current helps reduce overall power consumption, making this Op Amp ideal for energy-efficient designs.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides a high level of stability and accuracy, suitable for a variety of analog applications.

Packing Method: TAPE AND REEL

Tape and reel packing method facilitates automated assembly, making it easier for mass production while minimizing handling damage.

Nominal Slew Rate: 0.5 V/us

A slew rate of 0.5 V/µs offers decent response times for applications involving audio signals and slow-transient signals.

Terminal Pitch: 1.27 mm

This terminal pitch provides compatibility with standard PCB footprints and simplifies design layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS932AIDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

66 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS932AIDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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