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TS932AID

STMicroelectronics

TS932AID by STMicroelectronics

TS932AID by STMicroelectronics is a dual operational amplifier ideal for low-power applications. It features a max input offset voltage of 10 mV, operates at supply voltages of 3-12 V, and has an impressive CMRR of 85 dB. Its compact design makes it suitable for industrial use in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,367 parts In-Stock

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2,367

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Anansix

USA . 1,385 parts In-Stock

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1,385

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Digiode

USA . 274 parts In-Stock

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274

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 748 parts In-Stock

1+ parts

$2.116

100+ parts

-

1k+ parts

$1.904

10k+ parts

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748

$2.116

-

$1.904

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MKK Technologies

India . 1,372 parts In-Stock

1+ parts

$3.979

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1,372

$3.979

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DigiPath Technology Company

USA . 1,372 parts In-Stock

1+ parts

$3.979

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1,372

$3.979

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Microchip USA

USA . 304 parts In-Stock

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$4.003

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304

$4.003

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AZTECH Wire

Italy . 286 parts In-Stock

1+ parts

$12.730

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286

$12.730

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Vigor

Singapore . 2,427 parts In-Stock

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2,427

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Corphita

USA . 917 parts In-Stock

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917

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Parana Technologies

USA . 137 parts In-Stock

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$2.530

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137

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$2.530

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Overview

Elevate your projects with the TS932AID operational amplifier from STMicroelectronics, a leader in high-performance components. This micropower gem delivers exceptional accuracy and stability, perfect for precision applications like signal conditioning and sensing. With its low bias currents and remarkable common-mode rejection, you’ll enjoy superior performance while minimizing power consumption. Trust STMicroelectronics for quality that empowers innovation and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, making the op-amp suitable for various applications.

Maximum Input Offset Voltage: 10000 uV

A low input offset voltage allows for precise signal amplification, which is critical in high-accuracy applications.

Maximum Average Bias Current (IIB): 0.0003 uA

Extremely low bias current helps in minimizing the potential errors in applications requiring precision.

Surface Mount: YES

Surface mount capability provides ease of integration into compact designs and enhances performance.

No. of Functions: 2

Multi-functional design increases versatility in applications, helping reduce board space and complexity.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs for improved layout and design.

Nominal Common Mode Reject Ratio: 85 dB

High CMRR enhances performance in noisy environments, ensuring better signal integrity.

Nominal Supply Voltage / Vsup (V): 3

A low supply voltage requirement allows for battery-powered applications, contributing to lower power consumption.

Power Supplies (V): 3/5

Multiple power supply options provide flexibility for various circuit designs and requirements.

No. of Terminals: 8

With 8 terminals, it is easy to integrate into most standard circuits, providing a range of connections for operation.

Package Style (Meter): SMALL OUTLINE

The small outline packaging is ideal for space-constrained designs, making it compatible with modern electronics.

Maximum Supply Voltage Limit: 12 V

A versatile supply voltage range allows for its use in diverse applications without concern for exceeding voltage limits.

Maximum Operating Temperature: 85 °C

Operating at high temperatures ensures reliability in harsh environments, making it suitable for industrial applications.

Maximum Bias Current (IIB) @ 25 °C: 0.00015 uA

Minimized bias current at operational temperature contributes to improved accuracy in sensor applications.

Frequency Compensation: YES

Integrated frequency compensation allows for stable operation across different frequencies, enhancing performance.

Minimum Operating Temperature: -40 °C

This wide temperature range allows for reliable operation in extreme environments, ideal for industrial or outdoor use.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish ensures excellent conductivity and reliability, prolonging the lifespan of connections.

Terminal Position: DUAL

The dual position terminals simplify PCB layout and design, making manufacturing easier.

Maximum Seated Height: 1.75 mm

Low profile design facilitates better signal integrity and improved thermal management in compact applications.

Width: 3.9 mm

Compact width promotes space-efficacy on printed circuit boards and allows for more complex designs.

Micropower: YES

Micropower feature significantly reduces energy consumption, making it ideal for battery-operated devices.

Length: 4.9 mm

Short length ensures compatibility with high-density boards while contributing to overall design efficiency.

Temperature Grade: INDUSTRIAL

Industrial-grade specifications make this op-amp reliable for critical and demanding applications.

Low-Bias: YES

Low-bias characteristics are critical in high-precision applications, minimizing offset errors.

Nominal Unity Gain Bandwidth: 100 kHz

A nominal bandwidth of 100 kHz supports a wide range of frequencies, suitable for diverse signal processing tasks.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS, offering high performance and low power consumption.

Terminal Form: GULL WING

Gull wing form enhances solderability and ensures robust connections, crucial for reliable operation.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is versatile for various analog signal processing tasks.

Maximum Supply Current: 0.066 mA

Very low supply current extends battery life and is advantageous in energy-sensitive applications.

Architecture: VOLTAGE-FEEDBACK

Voltage feedback architecture provides good stability and ease of use in feedback loops.

Packing Method: TUBE

Tube packaging ensures safe handling and organized storage, facilitating efficient assembly in production.

Nominal Slew Rate: 0.5 V/µs

A nominal slew rate of 0.5 V/µs allows for adequate response to fast-changing signals, enhancing the op-amp's performance.

Terminal Pitch: 1.27 mm

Standard terminal pitch ensures compatibility with most PCB layouts, allowing for easier integration.

Technical Specifications

Operational Amplifiers (Op Amps) TS932AID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

66 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS932AID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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