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TS931AIDT

STMicroelectronics

TS931AIDT by STMicroelectronics

TS931AIDT by STMicroelectronics is a micropower operational amplifier ideal for industrial applications. It features a max input offset voltage of 10 mV, low bias current of 0.3 nA, and operates within -40 °C to 85°C. Its compact design and high CMR make it suitable for precision signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,238 parts In-Stock

1+ parts

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5,238

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Digiode

USA . 3,062 parts In-Stock

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3,062

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Anansix

USA . 1,449 parts In-Stock

1+ parts

-

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1,449

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.722

100+ parts

$1.567

1k+ parts

$1.412

10k+ parts

-

3,000

$1.722

$1.567

$1.412

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IDEA Electronic Components Group

UK . 1,151 parts In-Stock

1+ parts

$5.366

100+ parts

-

1k+ parts

$4.830

10k+ parts

-

1,151

$5.366

-

$4.830

-

MKK Technologies

India . 1,640 parts In-Stock

1+ parts

$10.091

100+ parts

-

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-

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1,640

$10.091

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DigiPath Technology Company

USA . 1,640 parts In-Stock

1+ parts

$10.091

100+ parts

-

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-

10k+ parts

-

1,640

$10.091

-

-

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AZTECH Wire

Italy . 43 parts In-Stock

1+ parts

$12.290

100+ parts

-

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43

$12.290

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Microchip USA

USA . 379 parts In-Stock

1+ parts

$26.997

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379

$26.997

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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A-Z Elektronik GmbH

Germany . 5,526 parts In-Stock

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5,526

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Vigor

Singapore . 3,763 parts In-Stock

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3,763

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Parana Technologies

USA . 1,046 parts In-Stock

1+ parts

-

100+ parts

$6.416

1k+ parts

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1,046

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$6.416

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Corphita

USA . 387 parts In-Stock

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387

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Overview

Experience unparalleled performance with the TS931AIDT operational amplifier from STMicroelectronics. Renowned for their innovation and reliability, STMicroelectronics delivers exceptional quality in every product, and the TS931AIDT is no exception. With its micropower consumption and impressive temperature range, this Op Amp excels in diverse applications, from industrial automation to precision instrumentation, ensuring longevity and efficiency that add significant value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection while also being lightweight, ensuring reliability in various applications.

Maximum Input Offset Voltage: 10000 uV

A relatively high maximum input offset voltage is acceptable for many applications, allowing for greater design flexibility.

Maximum Average Bias Current (IIB): 0.0003 uA

The ultra-low average bias current makes this op-amp ideal for battery-powered and low-current applications, enhancing efficiency.

Surface Mount: YES

Surface mount capability facilitates automated manufacturing processes, leading to reduced assembly costs and improved performance.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design that optimizes space usage on PCBs, making it suitable for dense circuit layouts.

Nominal Common Mode Reject Ratio: 85 dB

The high common mode reject ratio ensures excellent rejection of noise and interference, improving accuracy in signal amplification.

Nominal Supply Voltage / Vsup (V): 3

A low nominal supply voltage allows for compatibility with low-voltage systems, enhancing versatility in modern electronic designs.

Power Supplies (V): 3/5

The option to operate from both 3V and 5V power supplies broadens the range of applications where this op-amp can be effectively used.

No. of Terminals: 8

An 8-terminal configuration is standard for op-amps, allowing for easy integration into a wide variety of circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a minimal footprint, making it suitable for compact electronic designs.

Maximum Supply Voltage Limit: 12 V

The maximum supply voltage limit of 12V provides flexibility in high-voltage applications while maintaining safe operation.

Maximum Operating Temperature: 85 °C

An operating temperature up to 85 °C makes this op-amp suitable for industrial applications, ensuring reliability in challenging environments.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

The extremely low bias current at 25 °C contributes to precision, especially important in high-impedance circuit designs.

Frequency Compensation: YES

Built-in frequency compensation enhances stability across a range of operating conditions, improving overall performance.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C expands the applications for this op-amp into extreme environments and outdoor use.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold terminal finish ensures superior conductivity and resistance to corrosion, enhancing reliability and lifespan.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout options, simplifying the integration process in designs.

Maximum Seated Height: 1.75 mm

A low seated height ensures compatibility with thin-profile designs, making it suitable for modern compact electronics.

Width: 3.9 mm

A compact width allows for efficient use of board space, useful in miniaturized devices.

Micropower: YES

Micropower consumption is ideal for energy-sensitive applications, enabling long battery life in portable devices.

Length: 4.9 mm

A short length complements the compact design, optimizing layout and minimizing signal path lengths.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures reliability and performance in demanding conditions, suitable for a wide range of applications.

Low-Bias: YES

Low-bias characteristics enhance precision in signal processing applications, making it suitable for high-performance circuits.

Nominal Unity Gain Bandwidth: 100 kHz

A unity gain bandwidth of 100 kHz allows for versatile applications in audio and signal processing without significant distortion.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS processes, leading to high speed and low power consumption.

Terminal Form: GULL WING

Gull-wing terminal form is standard in surface mount technology, allowing for easy soldering and assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this device is versatile and can be used for various tasks including amplification, filtering, and integration.

Maximum Supply Current: 0.033 mA

The low maximum supply current ensures energy efficiency, making this op-amp suitable for battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is ideal for a wide range of applications, providing stability and simplicity in circuit design.

Packing Method: TAPE AND REEL

Tape and reel packaging facilitates automated assembly processes, reducing manufacturing time and costs.

Nominal Slow Rate: 0.5 V/us

A nominal slow rate of 0.5 V/us allows for controlled response times in applications, enhancing stability and performance.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm is standard for many designs, facilitating soldering and compatibility with various PCB layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS931AIDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

33 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS931AIDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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