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TS932AIPT

STMicroelectronics

TS932AIPT by STMicroelectronics

TS932AIPT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 5000 µV and an average bias current of just 0.15 nA. It operates within -40 °C to 85°C, making it ideal for industrial applications. Its compact design features an 8-terminal gull-wing package for efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,876 parts In-Stock

1+ parts

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4,876

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Anansix

USA . 2,129 parts In-Stock

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2,129

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Digiode

USA . 1,375 parts In-Stock

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1,375

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,132 parts In-Stock

1+ parts

$3.168

100+ parts

-

1k+ parts

$2.851

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1,132

$3.168

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$2.851

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MKK Technologies

India . 2,170 parts In-Stock

1+ parts

$5.956

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2,170

$5.956

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DigiPath Technology Company

USA . 2,170 parts In-Stock

1+ parts

$5.956

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2,170

$5.956

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Corphita

USA . 2,619 parts In-Stock

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2,619

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Parana Technologies

USA . 83 parts In-Stock

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$3.787

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83

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$3.787

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Overview

Elevate your electronic projects with the TS932AIPT operational amplifier from STMicroelectronics! Renowned for their innovation and reliability, STMicroelectronics delivers exceptional performance in a compact package designed for versatility. The TS932AIPT features outstanding common mode rejection and ultra-low bias current, making it perfect for precision applications across industrial and consumer electronics. Experience superior quality and unmatched support, ensuring your designs stand out!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and reliability, making it suitable for various applications.

Maximum Input Offset Voltage: 5000 uV

With a maximum input offset voltage of 5000 uV, this Op Amp ensures precision in analog signal processing, essential for high-performance applications.

Maximum Average Bias Current (IIB): 0.00015 uA

A very low bias current helps in reducing error in precision applications, making it ideal for low-power circuit designs.

Surface Mount: YES

The surface mount design enables easy integration into compact designs and enhances the overall circuit density.

No. of Functions: 2

Having two functions in a single chip helps in saving space and costs, adding versatility to the design.

Package Shape: RECTANGULAR

The rectangular package shape is convenient for layout design and optimizes space on PCB.

Nominal Common Mode Reject Ratio: 85 dB

A high common-mode rejection ratio ensures that the Op Amp performs well in noisy environments, enhancing signal fidelity.

Nominal Supply Voltage / Vsup (V): 3

A low nominal supply voltage allows for battery-operated designs and reduces overall power consumption.

No. of Terminals: 8

With 8 terminals, the Op Amp provides flexibility in circuit design and connectivity options.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline thin profile shrinks the footprint on the PCB, enabling modern compact design requirements.

Maximum Supply Voltage Limit: 12 V

A maximum supply voltage of 12 V allows for a wide range of applications, from low to moderate voltage systems.

Maximum Operating Temperature: 85 °C

The capability to operate at high temperatures increases the product's reliability in demanding environments.

Minimum Operating Temperature: -40 °C

With a low operating temperature limit, this Op Amp is suitable for harsh environments, including automotive and industrial applications.

Terminal Position: DUAL

The dual terminal position accommodates various PCB layouts and enhances design flexibility.

Maximum Seated Height: 1.2 mm

A low seated height helps in low-profile design requirements, ideal for compact device applications.

Width: 3 mm

Narrow width facilitates dense layouts on circuit boards, allowing for more compact designs.

Length: 4.4 mm

A compact length helps in fitting within small form-factor devices without compromising performance.

Temperature Grade: INDUSTRIAL

Designed for an industrial temperature range, this Op Amp is suitable for rugged environments demanding reliability.

Nominal Unity Gain Bandwidth: 100 kHz

A nominal unity gain bandwidth of 100 kHz allows for adequate speed in a variety of signal processing applications.

Nominal Negative Supply Voltage (Vsup): 0 V

Setting the nominal negative supply voltage at 0 V simplifies power supply design, especially in single-supply configurations.

Nominal Slow Rate: 0.05 V/us

This slow rate implies good stability and reduced overshoot, beneficial for applications requiring precise control.

Terminal Pitch: 0.65 mm

A standard terminal pitch eases the soldering process and improves compatibility with pick-and-place assembly.

Technical Specifications

Operational Amplifiers (Op Amps) TS932AIPT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

0.05 V/us

Peak Bias Current:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

TS932AIPT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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