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TS27L2BID

STMicroelectronics

TS27L2BID by STMicroelectronics

TS27L2BID by STMicroelectronics is a dual operational amplifier ideal for automotive applications. It features a max input offset voltage of 3500 µV, low bias current of 0.3 nA, and operates within -40 °C to 125°C. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,068 parts In-Stock

1+ parts

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8,068

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Digiode

USA . 2,479 parts In-Stock

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2,479

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Anansix

USA . 1,376 parts In-Stock

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1,376

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,122 parts In-Stock

1+ parts

$1.162

100+ parts

-

1k+ parts

$1.046

10k+ parts

-

2,122

$1.162

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$1.046

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MKK Technologies

India . 672 parts In-Stock

1+ parts

$2.185

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-

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672

$2.185

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DigiPath Technology Company

USA . 672 parts In-Stock

1+ parts

$2.185

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672

$2.185

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AZTECH Wire

Italy . 273 parts In-Stock

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$10.120

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273

$10.120

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Microchip USA

USA . 293 parts In-Stock

1+ parts

$30.088

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293

$30.088

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Component Stockers USA

USA . 323 parts In-Stock

1+ parts

$99.990

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323

$99.990

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Vigor

Singapore . 5,000 parts In-Stock

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5,000

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Corphita

USA . 2,297 parts In-Stock

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2,297

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Parana Technologies

USA . 2,286 parts In-Stock

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$1.389

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2,286

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$1.389

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Overview

Unlock unparalleled performance with the TS27L2BID operational amplifier from STMicroelectronics. Renowned for its precision and reliability, this op-amp excels in automotive applications where quality is non-negotiable. Benefit from its micropower design, ensuring efficient operation even under demanding conditions. With low bias current and high common-mode rejection, it delivers exceptional signal integrity, making it the ideal choice for innovative designs that demand excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 3500 uV

A relatively low input offset voltage enhances accuracy and precision in operational applications, minimizing errors in signal processing.

Maximum Average Bias Current (IIB): 0.0003 uA

Ultra-low bias current is ideal for applications requiring high precision and low power consumption, especially in battery-powered devices.

Surface Mount: YES

Surface mount capability facilitates compact designs and easy integration into automated assembly processes.

No. of Functions: 2

Dual-function capability optimizes design space and simplifies circuit complexity.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and integration into existing designs.

Nominal Common Mode Reject Ratio: 80 dB

High CMRR ensures excellent performance in rejecting noise and interference, leading to more reliable signal integrity.

Nominal Supply Voltage / Vsup (V): 10

A nominal supply voltage of 10 V is versatile for many applications, offering balance between performance and power consumption.

Power Supplies (V): 5/10

Flexibility in power supply voltages enhances compatibility with various circuit designs.

No. of Terminals: 8

The 8-terminal configuration allows for straightforward integration, making it ideal for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is perfect for space-constrained applications, allowing for more compact design layouts.

Maximum Supply Voltage Limit: 18 V

A high voltage limit supports a variety of operational ranges, ensuring stability under different conditions.

Maximum Operating Temperature: 125 °C

A high operating temperature range is suitable for demanding environments, including automotive applications.

Frequency Compensation: YES

Built-in frequency compensation enhances stability in feedback applications, reducing the risk of oscillation.

Minimum Voltage Gain: 40000

A high voltage gain factor enables amplification of weak signals, making it suitable for precision signal processing.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in extreme conditions, critical for automotive and industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish enhances conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal positioning simplifies routing on circuit boards, enhancing overall design efficiency.

Maximum Seated Height: 1.75 mm

Low seated height contributes to compact design, making it suitable for space-limited applications.

Width: 3.9 mm

Minimal width allows for narrow PCB layouts, facilitating innovative electronic designs.

Micropower: YES

Micropower capability enables low energy consumption, extending battery life in portable applications.

Length: 4.9 mm

Short length aids in compact PCB assembly and enhances design flexibility in tight spaces.

Temperature Grade: AUTOMOTIVE

Automotive-grade components are tailored for high-stress conditions, ensuring robust performance and reliability.

Low-Bias: YES

Low-bias configuration is essential for precision applications, minimizing offset voltages in high-performance circuits.

Maximum Negative Supply Voltage Limit: 0 V

Zero negative supply voltage simplifies the design and reduces complexity in applications that do not require negative voltage.

Nominal Negative Supply Voltage (Vsup): 0 V

A nominal negative supply voltage of 0 V allows for a straightforward design in single-supply applications.

Nominal Unity Gain Bandwidth: 100 kHz

A unity gain bandwidth of 100 kHz ensures effective amplification across a wide frequency range, suitable for diverse applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it a preferred choice for modern circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability, improving the longevity of the component in assemblies.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product provides versatile functionalities, ideal for a wide range of applications including signal conditioning.

Maximum Supply Current: 0.036 mA

A very low supply current further enhances energy efficiency, making it suitable for battery-powered devices.

Nominal Slow Rate: 0.04 V/us

Moderate slow rate is beneficial for stability in certain applications, providing controlled amplification without overshoot.

Terminal Pitch: 1.27 mm

The standard terminal pitch is compatible with common PCB layouts, facilitating easier integration into existing designs.

Technical Specifications

Operational Amplifiers (Op Amps) TS27L2BID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3500 uV

Minimum Voltage Gain:

40000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

36 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS27L2BID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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