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TS271AMJ

STMicroelectronics

TS271AMJ by STMicroelectronics

STMicroelectronics' TS271AMJ is an Operational Amplifier with 6500uV Max Input Offset Voltage, 80dB CMRR, and 2300kHz Unity Gain Bandwidth. Ideal for military applications due to its MIL-Grade temp range (-55 to 125 °C) and low bias current (0.0003uA). Package: Ceramic/Metal-Sealed Co-fired, Rectangular IN-LINE style with 8 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,225 parts In-Stock

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3,225

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Digiode

USA . 1,730 parts In-Stock

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1,730

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Anansix

USA . 924 parts In-Stock

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924

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 277 parts In-Stock

1+ parts

$4.582

100+ parts

-

1k+ parts

$4.123

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277

$4.582

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$4.123

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MKK Technologies

India . 323 parts In-Stock

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$8.615

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323

$8.615

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DigiPath Technology Company

USA . 323 parts In-Stock

1+ parts

$8.615

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323

$8.615

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Corphita

USA . 3,118 parts In-Stock

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3,118

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Parana Technologies

USA . 178 parts In-Stock

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$5.478

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178

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$5.478

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Overview

Elevate your electronic projects with the TS271AMJ from STMicroelectronics, a top-tier manufacturer known for quality and reliability. As part of the Operational Amplifiers category, this high-performance component offers precision and efficiency in various applications. With its low-bias technology and programmable power features, customers can expect exceptional value and performance. Experience seamless operation and enhanced functionality with the TS271AMJ, designed to meet the demands of even the most intricate projects. Trust STMicroelectronics to deliver cutting-edge solutions that elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability, making this operational amplifier suitable for a wide range of applications.

Maximum Input Offset Voltage: 6500 uV

With a low maximum input offset voltage, this operational amplifier provides accurate and precise amplification of signals, making it ideal for high-performance applications.

Nominal Common Mode Reject Ratio: 80 dB

The high common mode rejection ratio of 80 dB allows this operational amplifier to effectively reject common mode noise and interference, ensuring clean and accurate signal amplification.

Nominal Supply Voltage / Vsup (V): 10

Operating at a nominal supply voltage of 10V, this operational amplifier offers a good balance between power consumption and performance.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this operational amplifier can function reliably in harsh environments or extreme temperature conditions.

Nominal Unity Gain Bandwidth: 2300 kHz

The high nominal unity gain bandwidth of 2300 kHz ensures that this operational amplifier can handle high-frequency signals with minimal distortion, making it suitable for a wide range of applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for precision signal amplification and processing, making it a versatile choice for various electronic circuits and applications.

Technical Specifications

Operational Amplifiers (Op Amps) TS271AMJ attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

2.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

6000

Nominal Slew Rate:

4.5 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TS271AMJ Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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