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TS271AMDT

STMicroelectronics

TS271AMDT by STMicroelectronics

TS271AMDT from STMicroelectronics is a CMOS operational amplifier with a max input offset voltage of 6500 µV and an 80 dB CMRR. It operates within -55 °C to 125°C, making it ideal for military applications. This low-bias op amp supports programmable power and features a nominal gain of 6000.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,550 parts In-Stock

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4,550

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Digiode

USA . 2,638 parts In-Stock

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2,638

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Anansix

USA . 1,575 parts In-Stock

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1,575

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 146 parts In-Stock

1+ parts

$2.587

100+ parts

-

1k+ parts

$2.328

10k+ parts

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146

$2.587

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$2.328

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MKK Technologies

India . 880 parts In-Stock

1+ parts

$4.865

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880

$4.865

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DigiPath Technology Company

USA . 880 parts In-Stock

1+ parts

$4.865

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880

$4.865

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Corphita

USA . 3,535 parts In-Stock

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3,535

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Parana Technologies

USA . 1,134 parts In-Stock

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$3.093

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1,134

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$3.093

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Overview

Elevate your designs with the TS271AMDT from STMicroelectronics, a trusted leader in precision electronics. This operational amplifier delivers exceptional performance with low offset voltage and minimal bias current, ensuring accuracy in your applications. Ideal for a range of uses from industrial controls to consumer electronics, its compact size and robust temperature ratings make it perfect for demanding environments. Experience reliability and efficiency that enhance your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures that the operational amplifier is lightweight and resistant to moisture, making it suitable for various environments.

Maximum Input Offset Voltage: 6500 uV

The low maximum input offset voltage enhances accuracy in signal amplification, making this op amp reliable for precision applications.

Maximum Average Bias Current (IIB): 0.0003 uA

With such a low bias current, the op amp minimizes offset errors, resulting in improved performance in low-power and high-precision circuits.

Surface Mount: YES

Being surface mount compatible allows for easier integration in compact designs, enhancing PCB space efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates efficient layout and routing in printed circuit boards (PCBs).

Nominal Common Mode Reject Ratio: 80 dB

A high common mode rejection ratio helps in rejecting noise from unwanted signals, allowing for clearer and more accurate data acquisition.

Nominal Supply Voltage / Vsup (V): 10

The 10V nominal supply voltage offers versatility for common applications while providing sufficient headroom for performance.

Maximum Supply Voltage Limit: 18 V

A maximum voltage limit of 18V ensures that the device can handle a wide range of supply voltages, increasing design flexibility.

Maximum Operating Temperature: 125 °C

The ability to operate at elevated temperatures makes this op amp suitable for applications in harsh environments.

Frequency Compensation: YES

Integrated frequency compensation ensures stable operation across various frequencies, making this op amp reliable for diverse applications.

Minimum Voltage Gain: 6000

The high minimum voltage gain ensures effective amplification of weak signals, critical for maintaining signal integrity.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this op amp is ideal for applications in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish improves solderability and durability, ensuring reliable connections in various applications.

Terminal Position: DUAL

The dual terminal position supports different layout designs, providing flexibility in circuit board integration.

Maximum Seated Height: 1.75 mm

Its low profile design is advantageous for compact electronic devices, fitting seamlessly into tight spaces.

Width: 3.9 mm

The compact width allows for dense circuit designs, optimizing space usage on PCB layouts.

Length: 4.9 mm

Short length simplifies routing on PCBs, making it easier for designers to achieve desired board layouts.

Temperature Grade: MILITARY

Military grade qualification ensures high reliability and performance in demanding environments, making it suitable for defense applications.

Low-Bias: YES

Low-bias characteristics enhance the op amp’s performance in sensitive applications, such as biomedical sensors and precision electronics.

Maximum Negative Supply Voltage Limit: 0 V

Restricting the negative supply voltage to 0V simplifies power supply design while ensuring safe operation.

Nominal Unity Gain Bandwidth: 100 kHz

A unity gain bandwidth of 100 kHz indicates versatility across various applications, suitable for many signal processing tasks.

Technology: CMOS

Using CMOS technology ensures low power consumption, making it an efficient choice for battery-operated devices.

Terminal Form: GULL WING

Gull wing terminals make hand soldering easier, improving manufacturability in both automated and manual assembly processes.

Amplifier Type: OPERATIONAL AMPLIFIER

As a versatile operational amplifier, it supports a variety of applications like filtering, amplifying, and signal conditioning.

Maximum Supply Current: 1.5 mA

The low supply current enables operation in low-power applications, extending battery life in portable devices.

Nominal Negative Supply Voltage (Vsup): 0 V

The nominal negative supply voltage of 0V is suitable for dual-supply configurations and eases circuit design.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides enhanced linearity and stability, making it suitable for a wide range of signal types.

Packing Method: TAPE AND REEL

Tape and reel packaging allows for efficient automated assembly processes, reducing manufacturing costs and improving production efficiency.

Programmable Power: YES

Programmable power features allow for customizable operational performance, increasing design versatility in various applications.

Nominal Slow Rate: 0.04 V/us

A slow rate of 0.04 V/us is advantageous in precision applications, minimizing unwanted voltage spiking during transient signals.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm is well-suited for standard PCB layouts, facilitating easy integration into existing designs.

Technical Specifications

Operational Amplifiers (Op Amps) TS271AMDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

6000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS271AMDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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