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TS271BID

STMicroelectronics

TS271BID by STMicroelectronics

STMicroelectronics' TS271BID is an Operational Amplifier with 3500uV Max Input Offset Voltage, 80dB CMRR, and 100kHz Unity Gain Bandwidth. Ideal for automotive applications due to its low-bias, CMOS technology, and VOLTAGE-FEEDBACK architecture.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,164 parts In-Stock

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4,164

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Vyrian

USA . 1,961 parts In-Stock

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1,961

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Anansix

USA . 1,894 parts In-Stock

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1,894

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,939 parts In-Stock

1+ parts

$1.513

100+ parts

-

1k+ parts

$1.362

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1,939

$1.513

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$1.362

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MKK Technologies

India . 1,767 parts In-Stock

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$2.846

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1,767

$2.846

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DigiPath Technology Company

USA . 1,767 parts In-Stock

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$2.846

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1,767

$2.846

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Vigor

Singapore . 7,500 parts In-Stock

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7,500

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Microchip USA

USA . 4,116 parts In-Stock

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Corphita

USA . 2,534 parts In-Stock

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Parana Technologies

USA . 1,762 parts In-Stock

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$1.810

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1,762

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$1.810

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Overview

Elevate your projects with the TS271BID by STMicroelectronics, a top-tier operational amplifier known for its superior quality and reliability. Manufactured by the industry leader STMicroelectronics, this versatile op amp offers exceptional performance in a compact package. Ideal for automotive applications, this amplifier provides precise and efficient operation, ensuring optimal functionality. Experience the value of enhanced performance and reliability with the TS271BID, setting new standards in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the operational amplifier.

Maximum Input Offset Voltage: 3500 uV

Ensures accurate and precise voltage signals for the amplifier's operation.

Maximum Average Bias Current (IIB): 0.0003 uA

Helps in maintaining low power consumption and efficient operation of the amplifier.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and facilitating mass production.

Nominal Common Mode Reject Ratio: 80 dB

Provides excellent rejection of common mode noise, ensuring clean and accurate output signals.

Nominal Supply Voltage / Vsup (V): 10

Ideal operating voltage for the amplifier, ensuring optimal performance.

Power Supplies (V): 10

Efficient power management with a suitable supply voltage for the amplifier.

No. of Terminals: 8

Offers sufficient connections for various applications and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving and easy integration in electronic devices.

Maximum Supply Voltage Limit: 18 V

Provides a safe operating range for the amplifier, protecting it from voltage spikes and overloads.

Maximum Operating Temperature: 125 °C

High temperature tolerance for reliable operation in diverse environments.

Frequency Compensation: YES

Enables stable performance and prevents oscillations in the amplifier circuit.

Minimum Voltage Gain: 6000

High voltage gain amplification for accurate signal processing and output.

Minimum Operating Temperature: -40 °C

Wide temperature range for operation in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures reliable and corrosion-resistant terminal connections.

Terminal Position: DUAL

Provides flexibility in circuit configurations and connections.

Maximum Seated Height: 1.75 mm

Low profile design for compact and slim electronic devices.

Width: 3.9 mm

Compact width for space-efficient circuit board layout.

Length: 4.9 mm

Optimal length for a balance between size and functionality.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications with reliable performance under harsh environmental conditions.

Low-Bias: YES

Minimizes bias current for efficient power consumption and precise signal processing.

Maximum Negative Supply Voltage Limit: 0 V

Indicates the lower limit for negative supply voltage, ensuring compatibility with specific circuit requirements.

Nominal Unity Gain Bandwidth: 100 kHz

Optimal bandwidth for unity gain operation with consistent performance.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Terminal Form: GULL WING

Facilitates easy soldering and secure mounting on circuit boards.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for precision signal amplification and processing.

Maximum Supply Current: 1.5 mA

Efficient power consumption with a low supply current requirement.

Nominal Negative Supply Voltage (Vsup): 0 V

Indicates the standard negative supply voltage for the amplifier.

Architecture: VOLTAGE-FEEDBACK

Utilizes a voltage-feedback architecture for stable and accurate amplification.

Programmable Power: YES

Offers flexibility in power management and customization of power settings.

Nominal Slow Rate: 0.04 V/us

Specifies the slow rate of voltage change, ensuring controlled and stable operation.

Terminal Pitch: 1.27 mm

Standard terminal spacing for easy connections and compatibility with various circuit configurations.

Technical Specifications

Operational Amplifiers (Op Amps) TS271BID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Programmable Power:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3500 uV

Minimum Voltage Gain:

6000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS271BID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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