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TN3015H-6G-TR

STMicroelectronics

TN3015H-6G-TR by STMicroelectronics

TN3015H-6G-TR by STMicroelectronics is a single SCR ideal for power control applications. It features a max on-state voltage of 1.6 V, non-repetitive peak on-state current of 295 A, and operates b/w -40 °C to 150 °C. This surface-mount device ensures efficient performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,256 parts In-Stock

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8,256

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Digiode

USA . 1,549 parts In-Stock

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1,549

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Anansix

USA . 288 parts In-Stock

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288

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IDEA Electronic Components Group

UK . 542 parts In-Stock

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$3.270

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$2.943

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542

$3.270

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$2.943

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Microchip USA

USA . 5,668 parts In-Stock

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$4.478

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$4.478

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MKK Technologies

India . 1,296 parts In-Stock

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$6.148

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1,296

$6.148

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DigiPath Technology Company

USA . 1,296 parts In-Stock

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$6.148

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$6.148

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Component Stockers USA

USA . 8,379 parts In-Stock

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$9.690

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8,379

$9.690

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AZTECH Wire

Italy . 1,213 parts In-Stock

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$10.970

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$10.970

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QUARKTWIN TECHNOLOGY LTD

USA . 17,649 parts In-Stock

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17,649

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Corphita

USA . 2,980 parts In-Stock

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Parana Technologies

USA . 1,864 parts In-Stock

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$3.909

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$3.909

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Overview

Unlock superior performance with the TN3015H-6G-TR SCR from STMicroelectronics. Renowned for their innovation and quality, STMicroelectronics delivers a reliable solution perfect for demanding applications like motor control, lighting systems, and power converters. With outstanding current handling and thermal stability, this compact, surface-mount device ensures efficiency and durability, providing unmatched value that elevates your projects to the next level.

Feature Benefit Bullets

Maximum On-state Voltage: 1.6 V

A low maximum on-state voltage ensures minimal power loss during operation, making this SCR efficient for power applications.

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material provides excellent insulation and protection, enhancing the longevity of the product.

Maximum DC Gate Trigger Current: 15 mA

This low gate trigger current results in reduced energy consumption and allows for easy interfacing with control circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and helps save space on your PCB layout.

Non Repetitive Peak On-state Current: 295 A

The ability to handle high peak currents makes this SCR suitable for demanding applications without risking damage.

Surface Mount: YES

Surface mount capability allows for high-density circuit designs, enabling smaller and more efficient devices.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization on circuit boards, contributing to compact designs.

Terminal Form: GULL WING

Gull wing terminals enhance soldering and assembly efficiency, resulting in better reliability and durability.

Maximum On-state Current: 19 A

A substantial maximum on-state current ensures strong performance in various applications, handling significant loads.

Repetitive Peak Reverse Voltage: 600 V

This capability allows the SCR to withstand high voltage environments, making it suitable for industrial applications.

Maximum Repetitive Peak Off-state Leakage Current: 5000 uA

Low leakage current provides better efficiency in standby modes, contributing to lower overall power consumption.

No. of Terminals: 2

With only two terminals, the SCR design is simplified, enabling easier integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained designs, allowing more compact solutions.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures the SCR can function effectively in harsh environments without performance degradation.

Trigger Device Type: SCR

As an SCR, this device has inherent mechanical reliability and suitability for high-power switching applications.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme cold makes this SCR ideal for applications in various climates and challenging environments.

Terminal Position: SINGLE

Single terminal positioning simplifies integration into your designs and reduces layout complexity.

Maximum RMS On-state Current: 30 A

A high RMS on-state current rating confirms this SCR’s capability to handle continuous high-load applications efficiently.

Maximum DC Gate Trigger Voltage: 1.3 V

The low gate trigger voltage allows for straightforward interfacing with low-voltage control circuits, enhancing design flexibility.

Case Connection: ANODE

Anode case connection simplifies circuit connections and reduces assembly complexity.

Repetitive Peak Off-state Voltage: 600 V

Capable of withstanding high off-state voltages, this SCR ensures reliability and performance in demanding applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

A high rate of rise capability enhances switching efficiency, making this SCR suitable for fast-switching applications.

Maximum Holding Current: 60 mA

Low holding current requirements allow for efficient operation in control circuits, further improving energy savings.

Nominal Circuit Commutated Turn-off Time: 80 µs

Fast turn-off time makes this SCR effective in applications requiring rapid switching and high efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN3015H-6G-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

80 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

60 mA

JESD-30 Code:

R-PSSO-G2

Non Repetitive Peak On-state Current:

295 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Voltage:

1.6 V

Maximum On-state Current:

19 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

30 A

Maximum Repetitive Peak Off-state Leakage Current:

5000 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TN3015H-6G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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