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T1235H-600G-TR

STMicroelectronics

T1235H-600G-TR by STMicroelectronics

T1235H-600G-TR by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 12 A, repetitive peak off-state voltage of 600 V, and operates b/w -40 °C to 150°C. Ideal for efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,400 parts In-Stock

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7,400

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Digiode

USA . 4,787 parts In-Stock

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4,787

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Anansix

USA . 835 parts In-Stock

1+ parts

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835

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Connector Distribution Corp

USA . 600 parts In-Stock

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600

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Right Parts Inc.

USA . 600 parts In-Stock

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,039 parts In-Stock

1+ parts

$2.653

100+ parts

-

1k+ parts

$2.388

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2,039

$2.653

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$2.388

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MKK Technologies

India . 1,603 parts In-Stock

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$4.989

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1,603

$4.989

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DigiPath Technology Company

USA . 1,603 parts In-Stock

1+ parts

$4.989

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1,603

$4.989

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AZTECH Wire

Italy . 946 parts In-Stock

1+ parts

$19.050

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946

$19.050

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Perfect Parts

USA . 7,968 parts In-Stock

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7,968

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A-Z Elektronik GmbH

Germany . 5,559 parts In-Stock

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5,559

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Corphita

USA . 2,556 parts In-Stock

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2,556

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Parana Technologies

USA . 1,138 parts In-Stock

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$3.172

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1,138

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$3.172

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Overview

Unlock exceptional performance with the T1235H-600G-TR from STMicroelectronics, a leader in quality semiconductor solutions. This advanced TRIAC boasts remarkable reliability and efficiency, making it ideal for diverse applications, from motor control to lighting systems. Experience reduced energy consumption and enhanced durability, empowering your designs with cutting-edge technology while ensuring peace of mind with ST's renowned commitment to excellence. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 35 mA

With a maximum gate trigger current of 35 mA, this TRIAC provides a relatively low power requirement for activation, enhancing efficiency.

Configuration: SINGLE

The single configuration simplifies the design of circuits, making it easier to integrate into various electronic systems.

Surface Mount: YES

Being a surface mount component allows for easier automation in circuit assembly and contributes to smaller PCB designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the circuit board, enabling compact designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical support and solderability, ensuring reliable connections.

Maximum Leakage Current: 5.5 mA

With a maximum leakage current of only 5.5 mA, this TRIAC minimizes energy loss, enhancing overall efficiency.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces potential points of failure in circuit applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces footprint on the PCB, allowing for higher component density in the design.

Maximum Operating Temperature: 150 °C

A high operating temperature of 150 °C ensures reliability and performance in demanding thermal environments.

Trigger Device Type: SNUBBERLESS TRIAC

The snubberless design provides better performance in inductive load applications, reducing component stress and increasing lifespan.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C ensures functionality in extreme cold environments, making it versatile for various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and corrosion resistance, enhancing long-term connectivity.

Terminal Position: SINGLE

Single terminal positioning allows for straightforward integration into designs while optimizing space.

Maximum RMS On-state Current: 12 A

With a maximum RMS on-state current of 12 A, this TRIAC can handle significant loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low DC gate trigger voltage of 1.3 V minimizes power consumption during operation, ensuring efficiency.

Case Connection: MAIN TERMINAL 2

Main terminal connection helps in simplifying wiring and ensuring secure electrical paths.

Repetitive Peak Off-state Voltage: 600 V

A high peak off-state voltage of 600 V allows this TRIAC to be used in high-voltage applications, providing versatility.

Minimum Critical Rate of Rise of Off-state Voltage: 300 V/µs

A critical rate of rise of 300 V/µs ensures stability and reliability in rapidly switching applications, enhancing performance.

Maximum Holding Current: 35 mA

With a maximum holding current of 35 mA, this TRIAC helps to prevent accidental triggering, ensuring stable operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T1235H-600G-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

300 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

5.5 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T1235H-600G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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