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T1210-800R

STMicroelectronics

T1210-800R by STMicroelectronics

STMicroelectronics T1210-800R is a TRIAC with 12A RMS current, 800V repetitive peak off-state voltage, and 1.3V max DC gate trigger voltage. It operates b/w -40 to 125 °C, ideal for AC power control applications requiring high current handling and precise triggering capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,885 parts In-Stock

1+ parts

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1,885

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Vyrian

USA . 1,452 parts In-Stock

1+ parts

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1,452

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Digiode

USA . 1,135 parts In-Stock

1+ parts

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1,135

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,182 parts In-Stock

1+ parts

$3.525

100+ parts

-

1k+ parts

$3.172

10k+ parts

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2,182

$3.525

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$3.172

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MKK Technologies

India . 1,122 parts In-Stock

1+ parts

$6.628

100+ parts

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1,122

$6.628

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DigiPath Technology Company

USA . 1,122 parts In-Stock

1+ parts

$6.628

100+ parts

-

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10k+ parts

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1,122

$6.628

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Corphita

USA . 1,014 parts In-Stock

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1,014

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Parana Technologies

USA . 672 parts In-Stock

1+ parts

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100+ parts

$4.214

1k+ parts

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10k+ parts

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672

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$4.214

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Overview

Experience the exceptional performance of the T1210-800R by STMicroelectronics, a top-tier manufacturer in the electronics industry. This TRIAC device offers reliable and efficient operation, making it ideal for a wide range of applications. With a maximum RMS on-state current of 12A and a repetitive peak off-state voltage of 800V, this product delivers unparalleled quality and durability. Trust in STMicroelectronics to provide you with the best-in-class components for your electronic needs. Elevate your projects with the T1210-800R and discover the difference it can make for you.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10000 mA

High trigger current allows for reliable and consistent activation of the TRIAC, ensuring stable performance.

Maximum Leakage Current: 0.005 mA

Low leakage current helps in minimizing power wastage and ensures efficient operation of the TRIAC.

Maximum Operating Temperature: 125 °C

Allows the TRIAC to operate in a wide range of temperature conditions without compromising on performance.

Trigger Device Type: TRIAC

Being a TRIAC, this product is suitable for alternating current applications and offers bidirectional control.

Minimum Operating Temperature: -40 °C

Capable of functioning effectively even in extremely cold environments.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability, ensuring easy and reliable connections during assembly.

Maximum RMS On-state Current: 12 A

High on-state current rating allows the TRIAC to handle heavy loads efficiently.

Maximum DC Gate Trigger Voltage: 1.3 V

Low trigger voltage requirement helps in minimizing power consumption during activation.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating makes this TRIAC suitable for applications requiring high voltage handling capabilities.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

Fast rate of rise of off-state voltage ensures quick response and reliable operation during rapid changes in voltage conditions.

Maximum Holding Current: 15 mA

The holding current value ensures stable latching of the TRIAC to prevent unintentional turn-off, enhancing overall reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) T1210-800R attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

10000 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T1210-800R Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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