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T1210-600R-TR

STMicroelectronics

T1210-600R-TR by STMicroelectronics

STMicroelectronics T1210-600R-TR is a TRIAC with 12A RMS current, 600V repetitive peak off-state voltage, and 1.3V max DC gate trigger voltage. Ideal for AC power control applications due to its high operating temperature range (-40 °C to 125°C) and low leakage current (0.005mA).

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,360 parts In-Stock

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4,360

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Digiode

USA . 4,188 parts In-Stock

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4,188

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Anansix

USA . 1,710 parts In-Stock

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1,710

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,960 parts In-Stock

1+ parts

$2.084

100+ parts

-

1k+ parts

$1.875

10k+ parts

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1,960

$2.084

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$1.875

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MKK Technologies

India . 2,061 parts In-Stock

1+ parts

$3.918

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2,061

$3.918

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DigiPath Technology Company

USA . 2,061 parts In-Stock

1+ parts

$3.918

100+ parts

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2,061

$3.918

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Corphita

USA . 2,781 parts In-Stock

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2,781

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Parana Technologies

USA . 337 parts In-Stock

1+ parts

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100+ parts

$2.492

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337

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$2.492

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Overview

Discover the unparalleled quality and reliability of the T1210-600R-TR by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics offers cutting-edge solutions for TRIAC applications. This versatile product provides a wide range of benefits, including a maximum RMS On-state Current of 12A and a Repetitive Peak Off-state Voltage of 600V. With a Maximum DC Gate Trigger Current of 10000mA and an operating temperature range from -40 °C to 125°C, this TRIAC is perfect for a variety of applications. Trust STMicroelectronics to deliver superior performance and value with the T1210-600R-TR.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10000 mA

Allows for precise control and triggering of the TRIAC, making it suitable for a wide range of applications.

Maximum Leakage Current: 0.005 mA

Low leakage current ensures efficient operation and prevents unnecessary power wastage.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments without any performance degradation, increasing the product's reliability.

Trigger Device Type: TRIAC

Being a TRIAC device enables bidirectional control of current flow, making it versatile for AC applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures, suitable for a variety of industrial and commercial environments.

Terminal Finish: MATTE TIN

MATTE TIN terminal finish ensures good conductivity, corrosion resistance, and solderability for reliable connections.

Maximum RMS On-state Current: 12 A

Can handle high current loads efficiently, making it suitable for power control and switching applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage requirement enables easy interfacing with control circuitry, enhancing the product's usability.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating allows for reliable isolation and control of AC power circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

Ensures fast and efficient turn-off of the TRIAC, which is crucial for high-frequency switching applications.

Maximum Holding Current: 15 mA

Sufficient holding current to maintain the on-state conduction, enhancing stability during operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T1210-600R-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

10000 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T1210-600R-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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