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STIEC45-28AS

STMicroelectronics

STIEC45-28AS by STMicroelectronics

STIEC45-28AS by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 32.6V, operates b/w -55 °C to 150 °C, and has a max clamping voltage of 49V. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 27,691 parts In-Stock

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27,691

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Pegasus Components GmbH

Germany . 4,800 parts In-Stock

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4,800

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Vyrian

USA . 4,760 parts In-Stock

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4,760

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Anansix

USA . 277 parts In-Stock

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277

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Digiode

USA . 71 parts In-Stock

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71

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.050

100+ parts

$0.046

1k+ parts

$0.041

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-

50

$0.050

$0.046

$0.041

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IDEA Electronic Components Group

UK . 2,282 parts In-Stock

1+ parts

$0.172

100+ parts

-

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$0.155

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2,282

$0.172

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$0.155

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MKK Technologies

India . 858 parts In-Stock

1+ parts

$0.324

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858

$0.324

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DigiPath Technology Company

USA . 858 parts In-Stock

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$0.324

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858

$0.324

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AZTECH Wire

Italy . 360 parts In-Stock

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$11.180

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360

$11.180

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Component Stockers USA

USA . 248 parts In-Stock

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$99.990

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248

$99.990

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Kepictronics

USA . 45,000 parts In-Stock

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45,000

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RC Electronics

USA . 21,600 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,052 parts In-Stock

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7,052

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Perfect Parts

USA . 5,458 parts In-Stock

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Corphita

USA . 3,401 parts In-Stock

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Parana Technologies

USA . 1,501 parts In-Stock

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$0.206

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1,501

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$0.206

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Overview

Elevate your circuit protection with the STIEC45-28AS from STMicroelectronics, a trusted leader in semiconductor innovation. This cutting-edge transient suppression device ensures your electronics remain safe from voltage spikes, enhancing longevity and reliability. Designed for seamless integration in compact applications, its robust performance across extreme temperatures adds unparalleled value to your projects. Choose STMicroelectronics for superior quality and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides resistance to environmental factors, making this device suitable for various applications.

Config: SINGLE

A single configuration simplifies the design process and saves space on PCBs, making it ideal for compact applications.

Surface Mount: YES

Being a surface mount device allows for easy integration into automated assembly processes, improving manufacturing efficiency.

Nominal Breakdown Voltage: 32.6 V

A nominal breakdown voltage of 32.6 V ensures optimal performance in protecting circuits from overvoltage conditions.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout on PCBs, enabling more effective use of space and better thermal management.

No. of Terminals: 2

With only 2 terminals, this device minimizes the complexity of the circuit design and contributes to reduced manufacturing costs.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact footprint, making it suitable for space-constrained electronic designs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this device is capable of functioning effectively in high-temperature environments.

Minimum Operating Temperature: -55 °C

The wide temperature range (-55 °C) ensures reliable performance in extreme cold conditions, making it versatile for various applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, enhancing the reliability and longevity of the device.

Terminal Position: DUAL

Dual terminal position maximizes layout flexibility and allows for easier routing on printed circuit boards, enhancing design versatility.

Minimum Breakdown Voltage: 31.1 V

A minimum breakdown voltage of 31.1 V contributes to effective transient suppression, safeguarding sensitive electronic components.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow temperature time limit of 30 seconds helps to maintain integrity and performance of the device during soldering processes.

Peak Reflow Temperature °C: 260

Operating at a peak reflow temperature of 260 °C supports compatibility with lead-free soldering techniques, catering to modern assembly standards.

Maximum Breakdown Voltage: 34.3 V

The maximum breakdown voltage of 34.3 V offers robust protection against voltage spikes, ensuring reliability in transient voltages.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this product is designed specifically to protect sensitive electronic components from voltage surges.

Technology: AVALANCHE

Utilizing avalanche technology enhances the device's ability to clamp excess voltage, providing efficient and effective protection.

Terminal Form: C BEND

C bend terminals facilitate reliable solder joints and connection stability, reducing the risk of mechanical failure in the circuit.

Maximum Repetitive Peak Reverse Voltage: 28 V

A maximum repetitive peak reverse voltage of 28 V ensures that the device can handle repeated instances of high reverse voltage without failure.

Polarity: UNIDIRECTIONAL

Unidirectional design is ideal for protecting circuits from positive voltage transients, simplifying application in DC circuits.

Maximum Clamping Voltage: 49 V

A maximum clamping voltage of 49 V provides a high level of protection against over-voltage conditions, safeguarding sensitive electronic components.

Diode Element Material: SILICON

Silicon as the diode element material ensures overall reliability and performance under a wide range of operating conditions.

Technical Specifications

Transient Suppression Devices STIEC45-28AS attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

34.3 V

Minimum Breakdown Voltage:

31.1 V

Nominal Breakdown Voltage:

32.6 V

Maximum Clamping Voltage:

49 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

28 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STIEC45-28AS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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