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STIEC45-27AS

STMicroelectronics

STIEC45-27AS by STMicroelectronics

STIEC45-27AS by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 31.6V, operates b/w -55 °C to 150 °C, and has a max clamping voltage of 47V. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 7,492 parts In-Stock

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Digiode

USA . 3,908 parts In-Stock

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Anansix

USA . 697 parts In-Stock

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Bristol Electronics

USA . 666 parts In-Stock

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Dan-Mar Components

USA . 666 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 551 parts In-Stock

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$0.134

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$0.121

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551

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MKK Technologies

India . 1,166 parts In-Stock

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$0.253

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DigiPath Technology Company

USA . 1,166 parts In-Stock

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$0.253

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$0.253

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AZTECH Wire

Italy . 898 parts In-Stock

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$19.640

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Kepictronics

USA . 86,600 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,463 parts In-Stock

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Corphita

USA . 4,383 parts In-Stock

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Perfect Parts

USA . 1,959 parts In-Stock

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Parana Technologies

USA . 527 parts In-Stock

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Overview

Elevate your designs with the STIEC45-27AS from STMicroelectronics, a trusted leader in semiconductor innovation. This robust transient suppression device ensures superior protection against voltage spikes, safeguarding your electronics in demanding environments. With its compact size and high thermal resistance, it’s perfect for automotive, industrial, and consumer applications. Experience reliability and performance that enhance your projects and provide peace of mind. Choose quality that lasts!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, making the device reliable in various applications.

Config: SINGLE

A single configuration simplifies design and integration into circuits, reducing space requirements.

Surface Mount: YES

Surface mount technology allows for efficient PCB space utilization and automated assembly processes, enhancing manufacturing efficiency.

Nominal Breakdown Voltage: 31.6 V

A nominal breakdown voltage within this range ensures effective voltage clamping in surge protection applications.

Package Shape: RECTANGULAR

The rectangular package shape contributes to ease of mounting and fitting on PCBs, optimizing layout design.

No. of Terminals: 2

Having two terminals simplifies connectivity and is common in standard transient suppression applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style promotes compact designs, suitable for space-constrained applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the device to function reliably in high-temperature environments.

Minimum Operating Temperature: -55 °C

The wide operating temperature range ensures the device can perform in extreme conditions, improving versatility.

Terminal Finish: MATTE TIN

Matte tin provides good solderability and corrosion resistance, enhancing long-term reliability.

Terminal Position: DUAL

Dual terminal position supports various mounting orientations, making the device versatile for different layouts.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V ensures effective voltage suppression to protect sensitive electronics.

Maximum Time At Peak Reflow Temperature: 30 s

Limiting exposure to peak reflow temperatures minimizes the risk of thermal damage during assembly processes.

Peak Reflow Temperature: 260 °C

High reflow temperature capability allows compatibility with modern soldering practices and materials.

Maximum Breakdown Voltage: 33.2 V

The ability to withstand higher breakdown voltages enhances the protection level for attached circuits.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are designed specifically for protecting against transients, making them ideal for safeguarding circuitry.

Technology: AVALANCHE

Avalanche technology enables rapid response to voltage spikes, ensuring timely protection of sensitive components.

Terminal Form: C BEND

C bend terminal form facilitates easy and reliable soldering, improving connection stability.

Maximum Repetitive Peak Reverse Voltage: 27 V

A specified maximum voltage rating ensures the device can effectively handle repetitive surges without failure.

Polarity: UNIDIRECTIONAL

Unidirectional devices are suitable for AC applications where reverse voltage protection is not required.

Maximum Clamping Voltage: 47 V

A high clamping voltage helps to prevent damage to low-voltage devices, ensuring effective operation even in high surge scenarios.

Diode Element Material: SILICON

Silicon materials provide excellent electrical properties and reliability, enhancing overall performance in transient suppression.

Technical Specifications

Transient Suppression Devices STIEC45-27AS attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

33.2 V

Minimum Breakdown Voltage:

30 V

Nominal Breakdown Voltage:

31.6 V

Maximum Clamping Voltage:

47 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

27 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STIEC45-27AS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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