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STIEC45-26AS

STMicroelectronics

STIEC45-26AS by STMicroelectronics

STIEC45-26AS by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 30.3V, operates b/w -55 °C to 150 °C, and has a max clamping voltage of 45V. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

$1.704

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7,000 parts In-Stock

1+ parts

$0.994

100+ parts

-

1k+ parts

-

10k+ parts

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7,000

$0.994

-

-

-

Mouser Electronics

USA . 5,954 parts In-Stock

1+ parts

$2.390

100+ parts

$1.310

1k+ parts

$1.110

10k+ parts

$1.000

5,954

$2.390

$1.310

$1.110

$1.000

DigiKey

USA . 5,027 parts In-Stock

1+ parts

$3.460

100+ parts

$1.560

1k+ parts

$1.226

10k+ parts

$1.001

5,027

$3.460

$1.560

$1.226

$1.001

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.018

5,000

-

-

-

$1.018

Distributors (In-Stock)

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Digiode

USA . 1,009 parts In-Stock

1+ parts

$2.270

100+ parts

-

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-

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1,009

$2.270

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-

-

Vyrian

USA . 4,149 parts In-Stock

1+ parts

$2.390

100+ parts

-

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4,149

$2.390

-

-

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Anansix

USA . 2,618 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,618

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,710 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

$0.087

10k+ parts

-

1,710

$0.097

-

$0.087

-

MKK Technologies

India . 368 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

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10k+ parts

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368

$0.182

-

-

-

DigiPath Technology Company

USA . 368 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

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368

$0.182

-

-

-

Corphita

USA . 1,338 parts In-Stock

1+ parts

$2.151

100+ parts

-

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1,338

$2.151

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Component Stockers USA

USA . 11,563 parts In-Stock

1+ parts

$2.350

100+ parts

$1.550

1k+ parts

$1.110

10k+ parts

-

11,563

$2.350

$1.550

$1.110

-

Andel Nordic

Denmark . 681 parts In-Stock

1+ parts

$3.615

100+ parts

-

1k+ parts

$3.471

10k+ parts

$3.471

681

$3.615

-

$3.471

$3.471

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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100+ parts

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90,000

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Kepictronics

USA . 51,000 parts In-Stock

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51,000

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Perfect Parts

USA . 50,808 parts In-Stock

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50,808

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A-Z Elektronik GmbH

Germany . 1,916 parts In-Stock

1+ parts

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1,916

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Parana Technologies

USA . 1,614 parts In-Stock

1+ parts

-

100+ parts

$0.116

1k+ parts

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10k+ parts

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1,614

-

$0.116

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-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Overview

Elevate your designs with the STIEC45-26AS from STMicroelectronics, a leader in innovative semiconductor solutions. This robust transient suppression device ensures reliable protection against voltage spikes, making it ideal for automotive, industrial, and consumer applications. With its compact package and superior performance in extreme temperatures, you can trust this component to enhance product longevity while safeguarding critical electronics. Choose quality, choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and resistance to environmental factors, ensuring long-term reliability in transient suppression applications.

Config: SINGLE

The single configuration makes this device compact, ideal for space-constrained designs while still providing effective transient suppression.

Surface Mount: YES

Surface mount capability allows for automated assembly, reducing manufacturing costs and improving production efficiency.

Nominal Breakdown Voltage: 30.3 V

A nominal breakdown voltage of 30.3 V provides effective protection for circuits operating below this level, ensuring component safety.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient use of PCB space and facilitates better heat dissipation.

No. of Terminals: 2

Two terminals simplify connections in circuit designs, making integration straightforward and reducing potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact electronics, accommodating high-density circuit board layouts.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this device can function effectively in high-temperature environments, enhancing system reliability.

Minimum Operating Temperature: -55 °C

A broad operating temperature range from -55 °C ensures this device can perform in harsh conditions, suitable for a variety of applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and reduces the risk of tarnishing, ensuring reliable connections over time.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options, improving design flexibility in circuit layouts.

Minimum Breakdown Voltage: 28.9 V

A minimum breakdown voltage of 28.9 V ensures effective clipping of surges, protecting sensitive components from voltage spikes.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time at peak reflow temperature of 30 seconds allows for reliable soldering processes, ensuring robust connections without damaging the device.

Peak Reflow Temperature: 260 °C

The capability to withstand a peak reflow temperature of 260 °C ensures compatibility with modern soldering techniques and materials.

Maximum Breakdown Voltage: 31.9 V

A maximum breakdown voltage of 31.9 V provides assurance against unexpected voltage spikes, essential for protecting critical circuit components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device is specifically designed to protect against voltage spikes, enhancing circuit reliability.

Technology: AVALANCHE

Using avalanche technology allows for rapid response to transient events, providing effective clamping and protection within microseconds.

Terminal Form: C BEND

The C bend terminal form enhances mounting stability and makes integration into PCB designs more efficient.

Maximum Repetitive Peak Reverse Voltage: 26 V

A maximum repetitive peak reverse voltage of 26 V ensures the device can handle repetitive spikes in voltage without failure.

Polarity: UNIDIRECTIONAL

The unidirectional design is ideal for applications where voltage needs to be clamped in one direction, simplifying circuit design.

Maximum Clamping Voltage: 45 V

With a maximum clamping voltage of 45 V, this device protects downstream components from damaging transients, ensuring circuit integrity.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties, contributing to efficient operation and reliable performance.

Technical Specifications

Transient Suppression Devices STIEC45-26AS attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

31.9 V

Minimum Breakdown Voltage:

28.9 V

Nominal Breakdown Voltage:

30.3 V

Maximum Clamping Voltage:

45 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

26 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STIEC45-26AS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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