Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
STB36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150°C and features METAL-OXIDE SEMICONDUCTOR technology. Suitable for surface mount configurations, it offers reliable performance in various electronic systems.
Median Price
$4.060
Lifecycle Status
Suppliers In-Stock
12
In-Stock Inventory
1k+
Adafruit Industries
1+ parts
$1.946
100+ parts
$1.926
1k+ parts
-
10k+ parts
Farnell
$4.940
$2.750
Mouser Electronics
$3.250
$2.940
Verical
$5.199
Element14
$3.670
Digiode
$1.849
Nova Conductors
$3.645
Chip Stock
ComSIT Distribution GmbH
Cyclops Electronics Ltd
Anansix
Vyrian
IDEA Electronic Components Group
$1.263
$1.137
Ampacity Inc.
$1.650
Corphita
$1.751
Advanced Electronics
$1.848
MKK Technologies
$2.375
DigiPath Technology Company
Argo Parts USA
Bastille Electronics
$3.463
$3.290
$3.244
Component Stockers USA
$6.270
$5.960
$5.770
Microchip USA
$22.472
Alle Elektronik GmbH
Lixinc
Perfect Parts
Epart123
$5.000
GreenTree Electronics
Continental Prestige Electronics
$3.370
$2.870
Parana Technologies
$1.510
Kepictronics
N-channel FETs generally have lower on-resistance and higher efficiency compared to P-channel FETs, making them a good choice for power applications.
Single configuration simplifies circuit design and reduces component count, making the product more reliable and cost-effective.
Surface mount technology allows for smaller and more compact designs, saving space in applications where real estate is limited.
High maximum drain current rating allows the FET to handle larger loads, making it suitable for high-power applications.
High power dissipation capability ensures that the FET can handle large amounts of power without overheating, improving reliability.
Metal-oxide semiconductor technology offers good performance and reliability, making the FET suitable for a wide range of applications.
High maximum operating temperature rating allows the FET to operate reliably in harsh environments without risk of damage or degradation.
Matte tin finish provides good solderability and ensures a reliable electrical connection, enhancing the overall performance of the FET.
Short maximum time at peak reflow temperature reduces the risk of thermal damage during soldering, ensuring the FET remains fully functional.
High peak reflow temperature tolerance allows for reliable solder joints and ensures the FET can withstand the soldering process without damage.
Power Field Effect Transistors (FET) STB36NM60ND attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
STB36NM60ND Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - D2PAK Lead Modification 04/Oct/2013
PCN Assembly/Origin - Mult Devices Testing 10/May/2018
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
M39029/58-360
Positronic Industries
CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;
SMBJ18CA
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Continental Device India
2N7002
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
Nexperia
EU2B-YS3103F
Idec
ROTARY SWITCH;
Alpha & Omega Semiconductor
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Surge Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
IRF7205TRPBF
Infineon Technologies
IRF7205TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 4.6A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE up to 150°C with GULL WING terminals.
IRF640
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
BSP129H6327XTSA1
Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
IRF530PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Case Connection: DRAIN; JESD-609 Code: e3;
IRF7493TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
BSS138
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
JANTX2N6796
Semicoa
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
IRFP460LC
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
FQD1N80TM
Onsemi
FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.
FDB2710
FDB2710 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, 50A Drain Current, and 0.0425 ohm On Resistance. Ideal for power management applications due to its 260W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
G3R350MT12D
Genesic Semiconductor
G3R350MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features a max IDM of 16A and EAS of 43mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and DRAIN case connection, it offers 0.455 ohm RDS(on) and can handle up to 63W power dissipation.
DMG2301L-7
Diodes Incorporated
DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.
IRLML0030TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
FDMS86300DC
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
IRF640STRRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
IRLR2908TRPBF
Infineon's IRLR2908TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 150A IDM. Ideal for SWITCHING applications, it features 0.028 ohm RDS(ON) and 120W Pdiss. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it operates up to 175°C making it suitable for high-power electronics.
AUIRF3205Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
SUM70101EL-GE3
Vishay Intertechnology
Vishay Intertechnology's SUM70101EL-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 240A pulsed drain current. Operating in enhancement mode, it has a max operating temperature of 175°C and low on-resistance of 0.0101 ohm.
IRFP450PBF
Vishay Intertechnology's IRFP450PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 180W and operates in ENHANCEMENT MODE at up to 150°C.
STL57N65M5
STMicroelectronics
STL57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 960mJ EAS, and 0.069 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a DRAIN case connection.
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STB37N60DM2AG
STB37N60DM2AG by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 28A max drain current. Ideal for switching applications, it operates in enhancement mode with a built-in diode, GULL WING terminals, and -55 to 150 °C temperature range.
STB38N65M5
STB38N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 120A IDM, 660mJ EAS, and 0.095 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W and can handle up to 30A ID.
STB33N65M2
STB33N65M2 by STMicroelectronics is a N-CHANNEL power FET with 650V DS breakdown voltage. It has a max pulsed drain current of 96A and an avalanche energy rating of 780mJ. This transistor is commonly used for switching applications.
STB34N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
STB30NF20L
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 1;
STB31N65M5
STB31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount configurations, this MOSFET is designed for efficient power management in various electronic devices.
STB32N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE;
STB33N60DM2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Case Connection: DRAIN; JEDEC-95 Code: TO-263AB;
STB30N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
STB35N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 27 A;
STB30N65DM6AG
Power Field-Effect Transistors;
STB34NM60ND
STB34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 116A max pulsed drain current and 0.11 ohm max on-resistance. The transistor operates in enhancement mode with a max power dissipation of 190W, making it suitable for high-power applications.
STB36N60M6
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
STB30NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
STB30N10T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; JEDEC-95 Code: TO-263AB; Terminal Finish: TIN LEAD;
STB30NF10T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Terminal Form: GULL WING; Terminal Finish: Matte Tin (Sn) - annealed;
STB3015LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Avalanche Energy Rating (EAS): 200 mJ; Transistor Application: SWITCHING;
STB30NF20TRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 200 V; Operating Mode: ENHANCEMENT MODE;
STB3020L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Terminal Position: SINGLE; Case Connection: DRAIN;
Supply Digital Components
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