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SMM4F6.5A-TR

STMicroelectronics

SMM4F6.5A-TR by STMicroelectronics

SMM4F6.5A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode with a max reverse power dissipation of 400 W and operates b/w -55 °C to 175°C. It features a breakdown voltage of 7.5 V, ideal for protecting sensitive electronics. This compact surface mount device ensures reliable performance in various applications, including surge protection.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,785 parts In-Stock

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Vyrian

USA . 794 parts In-Stock

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Anansix

USA . 87 parts In-Stock

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IDEA Electronic Components Group

UK . 286 parts In-Stock

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$0.092

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$0.083

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286

$0.092

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$0.083

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MKK Technologies

India . 1,894 parts In-Stock

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$0.173

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DigiPath Technology Company

USA . 1,894 parts In-Stock

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Component Stockers USA

USA . 8 parts In-Stock

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$0.590

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8

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Ampacity Inc.

Singapore . 11,876 parts In-Stock

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$1.010

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Kepictronics

USA . 85,000 parts In-Stock

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Metaverse IC Inc.

Canada . 85,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 1,918 parts In-Stock

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Parana Technologies

USA . 1,703 parts In-Stock

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$0.110

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$0.110

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Overview

Protect your devices with the SMM4F6.5A-TR from STMicroelectronics, a leader in high-quality electronic components. This robust transient suppression device ensures reliable performance across various applications, from automotive to industrial systems. With its superior clamping capabilities and durable construction, you can trust it to shield your circuits from voltage spikes, ultimately enhancing product longevity and reliability. Choose ST for unparalleled quality and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy aids in lightweight construction and provides moisture resistance, enhancing reliability.

Config: SINGLE

A single configuration allows for simpler integration into circuits, saving space and reducing complexity.

Surface Mount: YES

Surface mount capability allows for easy assembly and reduces the overall footprint of the device on a PCB.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

High power dissipation capacity makes this device suitable for protecting against transient voltage spikes.

Nominal Breakdown Voltage: 7.5 V

The nominal breakdown voltage of 7.5V is ideal for protecting sensitive components in low-voltage applications.

Package Shape: RECTANGULAR

The rectangular shape ensures compatibility with various PCB layouts, promoting ease of placement.

No. of Terminals: 2

Having only two terminals simplifies circuit design and installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style contributes to miniaturization, making it suitable for compact electronics.

Maximum Operating Temperature: 175 °C

A maximum operating temperature of 175 °C indicates robustness, allowing for use in harsher environments.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C expands its usability in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible connection options in circuit designs.

Maximum Power Dissipation: 2.5 W

With a maximum power dissipation of 2.5W, it can handle typical surge events effectively.

Minimum Breakdown Voltage: 7.13 V

A minimum breakdown voltage ensures protection at slightly lower voltage levels, safeguarding circuits.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C is compatible with modern soldering processes, ensuring minimal thermal stress.

Maximum Breakdown Voltage: 7.88 V

A maximum breakdown voltage of 7.88V provides a safety margin, protecting against voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it provides essential protection against voltage transients in circuits.

Technology: AVALANCHE

Avalanche technology enhances surge handling capabilities, making it a robust choice for transient suppression.

Terminal Form: FLAT

Flat terminals are advantageous for providing a secure mechanical connection and ease of soldering.

Maximum Repetitive Peak Reverse Voltage: 6.5 V

This low repetitive peak reverse voltage denotes that it is ideal for low voltage applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is suitable for protection strategies where reverse voltage is a concern, enhancing circuit integrity.

Maximum Clamping Voltage: 11.2 V

Max clamping voltage of 11.2V helps to minimize the stress on downstream components during transient events.

Diode Element Material: SILICON

Silicon material contributes to effective performance and reliability in suppressing voltage transients.

Technical Specifications

Transient Suppression Devices SMM4F6.5A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.5 V

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-222AA

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMM4F6.5A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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